Effects of the V_(GS)sweep range on the short channel effect in negative capacitance FinFETs  

作　　者：Fan ZHANG Zhaohao ZHANG Jiaxin YAO Qingzhu ZHANG Gaobo XU Zhenhua WU Huan LIU Genquan HAN Yan LIU Huaxiang YIN 

机构地区：[1]Integrated Circuit Advanced Process R&D Center,State Key Lab of Fabrication Technologies for Integrated Circuits,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China [2]School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,China [3]School of Microelectronics,Xidian University,Xi'an 710071,China

出　　处：《Science China(Information Sciences)》2024年第6期459-460,共2页中国科学（信息科学）（英文版）

基　　金：supported by National Key R&D Program of China(Grant No.2022ZD0119002);National Natural Science Foundation of China(Grant Nos.91964202,92064003,62025402,62090033,92364204,92264202,62293522);Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant No.2023130);Major Program of Zhejiang Natural Science Foundation(Grant No.LDT23F04024F04)。

摘　　要：As the CMOS technology scaling is reaching fundamental limits,there is a substantial demand for energy-efficient devices with lower operating voltage.Negative capacitance field-effect transistors(NCFETs)exhibit the capability to amplify the gate voltage and become promising candidates for future advanced process nodes.

关 键 词：CAPACITANCE CHANNEL effect 

分 类 号：TN386[电子电信—物理电子学]