MoTe_(2)/Ta_(2)NiSe_(5)/MoTe_(2)范德华双异质结实现超快、宽带和偏振敏感光电探测器  

Ultrafast,broadband and polarization-sensitive photodetector enabled by MoTe_(2)/Ta_(2)NiSe_(5)/MoTe_(2) van der Waals dual heterojunction

作　　者：张洁莲 黎思娜 朱玲玉 郑涛 李翎 邓群睿 潘志东 江美华 杨亚妮 林月蓉 李京波 霍能杰 Jielian Zhang;Sina Li;Lingyu Zhu;Tao Zheng;Ling Li;Qunrui Deng;Zhidong Pan;Meihua Jiang;Yani Yang;Yuerong Lin;Jingbo Li;Nengjie Huo(School of Semiconductor Science and Technology,South China Normal University,Foshan 528225,China;College of Physics and Optoelectronic Engineering,Zhejiang University,Hangzhou 310000,China;Guangdong Provincial Key Laboratory of Chip and Integration Technology,Guangzhou 510631,China)

机构地区：[1]School of Semiconductor Science and Technology,South China Normal University,Foshan 528225,China [2]College of Physics and Optoelectronic Engineering,Zhejiang University,Hangzhou 310000,China [3]Guangdong Provincial Key Laboratory of Chip and Integration Technology,Guangzhou 510631,China

出　　处：《Science China Materials》2024年第7期2182-2192,共11页中国科学（材料科学）（英文版）

基　　金：supported by the National Natural Science Foundation of China(11904108);the“Pearl River Talent Recruitment Program”(2019ZT08X639);Guangdong Basic and Applied Basic Research Foundation(2024A1515030107).

摘　　要：高效光电探测器在监控、热成像、光通信和环境监测等领域具有广泛、迫切的应用需求.优化光电探测器参数如微型化、高量子效率、超快响应速度等,仍然是一项艰巨的任务.我们提出了一种由顶部/底部MoTe_(2)和中间Ta_(2)NiSe_(5)层组成的双范德华异质结.利用双异质结界面增强光收集效率和产生两个对立的内置电场,使得器件具有400到1550 nm的宽光谱响应,并表现出优异的性能,包括82.9%的外量子效率和3.5/4.2μs的快速响应速度.此外,利用二维Ta_(2)NiSe_(5)纳米片的面内各向异性,我们实现了在635和1550 nm波长下的极化灵敏度,分别为16.3和8.1.这项研究为开发高性能和多功能光电探测器提供了平台,为先进光电器件的设计和应用提供了新的方向.The emergence of cutting-edge technology has spurred an urgent demand for highly efficient photodetectors,due to their crucial applications in surveillance,thermal imaging,optical communication and environmental monitoring.Yet,the simultaneous optimization of photodetector parameters including miniaturization,high quantum efficiency,and heterogenous functionality remains a challenging task.In this study,we address these limitations by leveraging the anisotropic properties of Ta_(2)NiSe_(5) materials for polarization-sensitive photodetection and selecting suitable two-dimensional(2D)materials to enhance the performance.We present a dual van der Waals heterojunction comprising top/bottom MoTe_(2) and middle Ta_(2)NiSe_(5) layers.Thanks to the augmented light collection efficiency and two opposing builtin electric fields at the dual heterojunction interfaces,our device demonstrates not only a broad spectral response ranging from 400 to 1550 nm,but also impressive performance parameters including an external quantum efficiency of 82.9%,and a rapid response speed of 3.5/4.2μs,which has a substantial improvement over the single junction device.Leveraging the robust in-plane anisotropy of 2D Ta_(2)NiSe_(5) nanosheets,the double heterojunction device displays competitive polarization sensitivity with polarization ratio values of 16.3 and 8.1 under 635 and 1550 nm,respectively.This work provides a promising platform for the development of high-performce and multifunctional photodetectors,thereby pioneering new directions for advanced optoelectronic device design and applications.

关 键 词：polarimetric photodetector TazNiSes/MoTe_(2)het-erojunction PHOTOVOLTAIC polarization sensitivity 

分 类 号：TN15[电子电信—物理电子学]