基于数据残留时间的SRAM-PUF预选算法  

SRAM-PUF Preselection Algorithm Based on Data Remanence Time

作　　者：陈泽亮 孔德珠 尹爱国 陈泽福 张培勇[1] CHEN Ze-liang;KONG De-zhu;YIN Ai-guo;CHEN Ze-fu;ZHANG Pei-yong(School of Micro-Nano Electronics,ZheJiang University,Hangzhou,Zhejiang 310000,China;Zhuhai Bentu Electronics Co.,Ltd,Zhuhai,Guangdong 519000,China)

机构地区：[1]浙江大学微纳电子学院,浙江杭州310000 [2]珠海奔图电子有限公司,广东珠海519000

出　　处：《电子学报》2024年第5期1478-1487,共10页Acta Electronica Sinica

基　　金：国家重点研发计划(No.2021YFB2206200)。

摘　　要：静态随机存取存储器(Static Random-Access Memory,SRAM)物理不可克隆函数(Physical Unclonable Function,PUF)利用参数设计完全相同的晶体管在制造过程中存在的工艺偏差,生成每块芯片无法克隆的密钥响应.由于SRAM-PUF内部错误分布的随机性,密钥重构需要使用纠错码,而纠错电路的面积与其纠错能力呈正相关,为了降低SRAM-PUF错误分布,减小纠错电路面积,本文通过对SRAM数据残留特性的研究,提出一种数据残留预选算法,对SRAM单元进行筛选,提高PUF响应稳定性,使用区块择优算法筛选SRAM区块,减小响应的分散度,以更短的时间和资源消耗生成SRAM-PUF响应,测试结果表明,在不同温度(-40℃~80℃)和±10%电压波动下,256位SRAM-PUF响应拥有99.8%的稳定性及1.9×10^(-8)的误码率,相对于通用的临时多数表决(Temporal Majority Voting,TMV)算法提升了1.7%的稳定性,降低2.1×10^(5)倍误码率,与1000次TMV相比,时间复杂度从O(2000n)线性降低到O(900n).经过72小时老化测试后,采用数据残留算法预选的SRAM-PUF稳定性仅下降0.2%.Static random-access memory(SRAM)physical unclonable function(PUF)makes use of the process deviation in the manufacturing process of transistors with identical parameter design,which generates the key response that cannot be cloned for each chip.Due to the randomness of SRAM-PUF internal error distribution,key reconstruction requires the use of error correction codes,and the area of error correction circuits is positively related to its error correction capability.In order to reduce the error distribution of SRAM-PUF and reduce the area of error correction circuits,this paper proposes a data remanence preselection algorithm through the research on characteristics of SRAM data remanence,screening SRAM cells,improving the stability of PUF response,and screening SRAM blocks using block optimization algorithm,reduce the dispersion of the response,which generates SRAM PUF response in a shorter time and resource consumption.Experimental results show that 256 bits SRAM-PUF response has 99.8% stability and 1.9×10^(-8)bit error rate under different temperatures(-40℃~80℃)and ±10% voltage fluctuations.Compared with the general temporary majority voting(TMV)algorithm,the stability is improved by 1.7% and the error rate is reduced by 2.1×10^(5)times,compared with 1000 times of TMV,linear reduction of time complexity from O(2000n)to O(900n).After 72 hours of aging testing,the stability of the SRAM-PUF pre-selected using the data remanence algorithm only decreased by 0.2%.

关 键 词：物理不可克隆函数 SRAM 预选算法 数据残留 临时多数表决 

分 类 号：TN4[电子电信—微电子学与固体电子学]