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作 者:张晨阳 莫德锋[2] 徐红艳[2] 马英杰 顾溢 李雪[2] 苏文献[1] ZHANG Chenyang;MO Defeng;XU Hongyan;MA Yingjie;GU Yi;LI Xue;SU Wenxian(School of Energy and Power Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China;National Key Laboratory of Infrared Detection,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai 200083,China)
机构地区:[1]上海理工大学能源与动力工程学院,上海200093 [2]中国科学院上海技术物理研究所红外探测全国重点实验室,上海200083
出 处:《光学精密工程》2024年第11期1667-1675,共9页Optics and Precision Engineering
基 金:国家重点研发计划资助项目(No.2023YFB3209604);国家自然科学基金资助项目(No.62075229,No.62175250);上海市科技重大项目(No.2019SZZX01)。
摘 要:微透镜与探测器芯片的集成应用可以提高探测器的光能利用效率,从而提高探测器的灵敏度。针对两种InP基InGaAs单光子红外探测器,分别设计了材料为磷化镓和硅的两种方形孔径微透镜阵列。介绍了微透镜阵列结构参数的设计流程并分析了每个步骤的设计要点,利用光线追迹软件对设计的微透镜阵列结构参数进行仿真校核,确定了两种微透镜阵列符合设计要求。使用台阶仪和共聚焦显微镜对制作完成的两种微透镜阵列进行了形貌检测,计算得出两种微透镜阵列的曲率偏差分别为1.38%和3.44%。实验测试了1.064μm波长下两种微透镜阵列在空气中的焦距,与模拟结果对比,得到焦距偏差为5.69%和2.76%。通过分析微透镜的制作工艺,两种偏差符合应用需求。The integrated application of microlens and detector chip can improve the efficiency of light energy utilization of the detector and thus increase the sensitivity of the detector.For two kinds of InP-based InGaAs single-photon infrared detectors,two kinds of square aperture microlens arrays with materials of GaP and Si are designed respectively.The design process of the structural parameters of the microlens arrays is introduced and the design points of each step are analyzed.The structural parameters of the designed microlens arrays are simulated and calibrated by ray tracing software,which determines that the two microlens arrays meet the design requirements.The morphology of the two fabricated microlens arrays was examined using a step meter and a confocal microscope.The curvature deviations of the two microlens arrays were calculated to be 1.38%and 3.44%,respectively.The focal lengths of two microlens arrays in air at 1.064μm wavelength were tested experimentally,and the focal deviations of 5.69%and 2.76%were obtained in comparison with the simulated results.By analyzing the manufacturing process of microlenses,the two deviations meet the application requirements.
分 类 号:TN364.2[电子电信—物理电子学]
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