半导体存储芯片的特征与发展分析  

Analysis on Development and Characteristic of Semiconductor Memory Chips

作　　者：许宁 付光辉 XU Ning;FU Guanghui(Hubei University of Arts and Science,Hubei,441053,China)

机构地区：[1]湖北文理学院,湖北441053

出　　处：《电子技术（上海）》2024年第4期22-24,共3页Electronic Technology

摘　　要：阐述数据存储已经成为半导体行业备受关注的领域。参考CHIPS 2020对技术发展的预测,分析当前半导体存储芯片发展现状,主要涵盖SRAM、DRAM和非易失性存储三个方面。这些存储芯片通常被应用于计算机硬件中的高速缓存、主存和固态硬盘等领域,不同种类的存储芯片在创新方面存在差异。This paper describes data storage which has become a highly regarded field in the semiconductor industry.Referring to the predictions on technological development in CHIPS 2020,it analyzes the current development status of semiconductor storage chips,mainly covering three aspects: SRAM,DRAM,and non-volatile memory.These storage chips are usually applied in fields such as high-speed cache,main memory,and solid-state drives in computer hardware,and there are differences in innovation among different types of storage chips.

关 键 词：静态随机存取(SRAM)技术 动态随机存取(DRAM)技术 读取密集型(Nand)闪存 电阻式随机存取(ReRAM) 

分 类 号：TN40[电子电信—微电子学与固体电子学] TN386