Double-cliff-layer uni-traveling-carrier photodiode with high responsivity and ultra-broad bandwidth  

作　　者：韩亚茹 田雨欣 熊兵 孙长征 王健 郝智彪 韩彦军 汪莱 李洪涛 甘霖 罗毅 Yaru Han;Yuxin Tian;Bing Xiong;Changzheng Sun;Jian Wang;Zhibiao Hao;Yanjun Han;Lai Wang;Hongtao Li;Lin Gan;Yi Luo(Beijing National Research Center for Information Science and Technology(BNRist),Department of Electronic Engineering,Tsinghua University,Beijing 100084,China;Flexible Intelligent Optoelectronic Device and Technology Center,Institute of Flexible Electronics Technology of THU,Jiaxing 314006,China)

机构地区：[1]Beijing National Research Center for Information Science and Technology(BNRist),Department of Electronic Engineering,Tsinghua University,Beijing 100084,China [2]Flexible Intelligent Optoelectronic Device and Technology Center,Institute of Flexible Electronics Technology of THU,Jiaxing 314006,China

出　　处：《Chinese Optics Letters》2024年第5期100-105,共6页中国光学快报（英文版）

基　　金：This work was supported in part by the National Key R&D Program of China(No.2022YFB2803002);National Natural Science Foundation of China(Nos.62235005,62127814,62225405,61975093,61927811,61991443,and 61974080);Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics.

摘　　要：A novel backside-illuminated double-cliff-layer uni-traveling-carrier(DCL-UTC)photodiode with both high responsivity and ultra-broad bandwidth is designed and demonstrated.A thick absorption layer is adopted for high responsivity,and a depletion region with double cliff layers is proposed to alleviate the space charge effect and maintain overshoot electron velocity under large photocurrents.In addition,inductive coplanar waveguide electrodes are employed to enhance the frequency response performance.The 6-μm-diameter photodiode exhibits a high responsivity of 0.51 A/W and a large 3-dB bandwidth of 102 GHz.A high RF output power of 2.7 dBm is recorded at 100 GHz.

关 键 词：uni-traveling-carrier photodiode high responsivity broad bandwidth 

分 类 号：TN31[电子电信—物理电子学]