氮化铝镓基深紫外发光二极管的研究进展  

Research Progress of Aluminum Gallium Nitride Based Deep Ultraviolet Light Emitting Diodes

作　　者：李煜 黄涌 李渊 江浩 Li Yu;Huang Yong;Li Yuan;Jiang Hao(School of Electronics and Information,Guangdong Polytechnic Normal University,Guangzhou 510665,Guangdong,China;Guangdong Industrial Training Center,Guangdong Polytechnic Normal University,Guangzhou 510665,Guangdong,China;School of Semiconductor Science and Technology,South China Normal University,Guangzhou 510631,Guangdong,China;School of Automation,Guangdong Polytechnic Normal University,Guangzhou 510665,Guangdong,China)

机构地区：[1]广东技术师范大学电子与信息学院,广东广州510665 [2]广东技术师范大学广东工业实训中心,广东广州510665 [3]华南师范大学半导体科学与技术学院,广东广州510631 [4]广东技术师范大学自动化学院,广东广州510665

出　　处：《激光与光电子学进展》2024年第9期13-28,共16页Laser & Optoelectronics Progress

基　　金：广东省自然科学基金面上项目(2022A1515010127)。

摘　　要：目前的氮化铝镓(AlGaN)基深紫外发光二极管(LED)与已全面商业化的氮化物蓝光LED相比,其外量子效率(EQE)仍旧处于较低水平。首先介绍了AlGaN基深紫外LED的发展现状,并分析了导致EQE低的原因。然后再分别从载流子注入效率、载流子辐射复合效率和光提取效率三个方面阐述了近年来AlGaN基深紫外LED在提高EQE方向上的研究进展。最后探讨了AlGaN基深紫外LED目前面临的挑战及其未来的发展机遇。Compared to fully commercialized nitride blue light light emitting diode(LED),the external quantum efficiency(EQE)of current Aluminum gallium nitride(AlGaN)based deep ultraviolet LED is still at a relatively low level.This review first introduces the current development status of AlGaN based deep ultraviolet LED and analyzes the reasons for low EQE.Then,the research progress in improving the EQE direction of AlGaN based deep ultraviolet LED in recent years is elaborated from three aspects:carrier injection efficiency,carrier radiation recombination efficiency,and light extraction efficiency.Finally,the current challenges and future development opportunities of AlGaN based deep ultraviolet LED were discussed.

关 键 词：氮化铝镓基深紫外发光二极管 外量子效率 注入效率 辐射复合效率 光提取效率 

分 类 号：TN312.8[电子电信—物理电子学]