X波段高集成硅基射频微系统  

X-Band Silicon-Based RF Microsystem with High Integration

作　　者：吴小玲 阮文州 刘德志[1] Wu Xiaoling;Ruan Wenzhou;Liu Dezhi(Nanjing Research Institute of Electronic Technology,Nanjing 210039,China)

机构地区：[1]南京电子技术研究所,南京210039

出　　处：《微纳电子技术》2024年第7期105-109,共5页Micronanoelectronic Technology

摘　　要：设计并制备了一款基于微电子机械系统(MEMS)工艺的小型化X波段硅基射频微系统,该微系统集成了变频器、功率放大器和MEMS双滤波器等,可实现信号的变频、滤波、放大。该微系统实现了硅基片上有源及无源芯片的异质集成,通过在硅基片上直接集成MEMS双滤波器及紧凑型布线分布实现了小型化,并通过在微系统内部的设计优化解决了芯片间级联匹配带来的寄生问题。该微系统尺寸8.5 mm×11 mm×1 mm,工作频率8~8.5 GHz,带内增益≥5 dB(平坦度≤±0.5 dB),带外抑制>80 dBc@7.5 GHz&9 GHz,中频输入端口驻波比≤1.7,射频输出端口驻波比≤1.4,满足设计及使用要求。此类硅基微系统具有高集成、小型化、方便使用等优点,是未来射频微系统的重要发展方向。A miniaturized X-band silicon-based radio frequency microsystem based on microelectro-mechanical system(MEMS)process was designed and prepared.The microsystem integrated frequency converters,power amplifiers and MEMS dual-filters and so on,which could achieve frequency conversion,filtering and amplification of the signals.This microsystem achieved heterogeneous integration of active and passive chips on a silicon substrate.The miniaturization was achieved through the directly integration of MEMS dual-filters and compact wiring distribution on the silicon substrate,and parasitic problems caused by cascading matching between chips were solved by design optimization within the microsystem.The microsystem has a size of 8.5 mm×11 mm×1 mm,operating frequency of 8-8.5 GHz,in-band gain≥5 dB(flatness≤±0.5 dB),out of band suppression>80 dBc@7.5 GHz&9 GHz,intermediate frequency input port standing wave ratio≤1.7 and radio frequency output port standing wave ratio≤1.4,meeting design and usage requirements.This type of silicon-based microsystems has advantages of high integration,miniaturization and ease of use,and is an important development direction for the future RF micro system.

关 键 词：微电子机械系统(MEMS) 高集成 微波组件 射频微系统 小型化 

分 类 号：TN405[电子电信—微电子学与固体电子学] TN43