Design of an on‑chip wavelength conversion device assisted by an erbium‑ytterbium co‑doped waveguide amplifier  

作　　者：Chen Zhou Xiwen He Mingyue Xiao Deyue Ma Weibiao Chen Zhiping Zhou 

机构地区：[1]School of Physical Sciences,University of Science and Technology of China,Hefei 230026,China [2]Aerospace Laser Technology and System Department,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China [3]Hangzhou Aijie Optoelectronic Technology Co.Ltd.,Hangzhou 311400,China

出　　处：《Frontiers of Optoelectronics》2024年第2期51-60,共10页光电子前沿（英文版）

基　　金：funded by the Key Program of the National Natural Science Foundation of China(Grant No.62035001);the International Partnership Program of Chinese Academy of Sciences(No.18123KYSB20210013);the Shanghai Science and Technology Innovation Action Plan(No.22dz208700).

摘　　要：In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2μm band,generally falling below−20.0 dB.To address this issue,we present a novel wavelength conversion device assisted by a waveguide amplifier,incorporating both AlGaAs wavelength converter and erbium-ytterbium co-doped waveguide amplifier,thereby achieving a notable conversion efficiency exceeding 0 dB.The noteworthy enhancement in efficiency can be attributed to the specific dispersion design of the AlGaAs wavelength converter,which enables an upsurge in conversion efficiency to−15.54 dB under 100 mW of pump power.Furthermore,the integration of an erbium-ytterbium co-doped waveguide amplifier facilitates a loss compensation of over 15 dB.Avoiding the use of external optical amplifiers,this device enables efficient and high-bandwidth wavelength conversion,showing promising applications in various fields,such as optical communication,sensing,imaging,and beyond.

关 键 词：Silicon-based optoelectronics Wavelength conversion Waveguide amplifier 2μm band 

分 类 号：TN722[电子电信—电路与系统]