Monolayer graphene/GaN heterostructure photodetector with UV‑IR dual‑wavelength photoresponses  

作　　者：Junjun Xue Jiaming Tong Zhujun Gao Zhouyu Chen Haoyu Fang Saisai Wang Ting Zhi Jin Wang 

机构地区：[1]College of Electronic and Optical Engineering&College of Flexible Electronics(Future Technology),Nanjing University of Posts and Telecommunications,Nanjing 210023,China [2]Portland Institute,Nanjing University of Posts and Telecommunications,Nanjing 210023,China

出　　处：《Frontiers of Optoelectronics》2024年第2期61-68,共8页光电子前沿（英文版）

基　　金：funded by the National Key R&D Program of China(Grant No.2022YFB3605403);the National Natural Science Foundation of China(Grant No.62374094,62104110,61974062,62004104);the Natural Science Foundation of Jiangsu Province(Grant No.BK20200094,BK20210577);the Project funded by China Postdoctoral Science Foundation(2023T160332);the open research fund of the National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology.

摘　　要：An ultraviolet-infrared(UV-IR)dual-wavelength photodetector(PD)based on a monolayer(ML)graphene/GaN heterostructure has been successfully fabricated in this work.The ML graphene was synthesized by chemical vapor deposition(CVD)and subsequently transferred onto GaN substrate using polymethylmethacrylate(PMMA).The morphological and optical properties of the as-prepared graphene and GaN were presented.The fabricated PD based on the graphene/GaN heterostructure exhibited excellent rectify behavior by measuring the current–voltage(I–V)characteristics under dark conditions,and the spectral response demonstrated that the device revealed an UV-IR dual-wavelength photoresponse.In addition,the energy band structure and absorption properties of the ML graphene/GaN heterostructure were theoretically investigated based on density functional theory(DFT)to explore the underlying physical mechanism of the two-dimensional(2D)/three-dimensional(3D)hybrid heterostructure PD device.This work paves the way for the development of innovative GaNbased dual-wavelength optoelectronic devices,offering a potential strategy for future applications in the field of advanced photodetection technology.

关 键 词：Wide bandgap semiconductors GRAPHENE DUAL-WAVELENGTH PHOTODETECTOR 

分 类 号：TN36[电子电信—物理电子学]