Design and simulation investigations on charge transport layers‑free in lead‑free three absorber layer all‑perovskite solar cells  

作　　者：Guangdong Li Mingxiang Xu Zhong Chen 

机构地区：[1]School of Physics,Southeast University,Nanjing 211189,China

出　　处：《Frontiers of Optoelectronics》2024年第2期69-85,共17页光电子前沿（英文版）

基　　金：supported by the National Key R&D Program of China(Grant No.2018YFA0704300);the Natural Science Foundation of Jiangsu Province of China(Grant No.BK20201285).

摘　　要：The multiple absorber layer perovskite solar cells(PSCs)with charge transport layers-free(CTLs-free)have drawn widespread research interest due to their simplified architecture and promising photoelectric characteristics.Under the circumstances,the novel design of CTLs-free inversion PSCs with stable and nontoxic three absorber layers(triple Cs_(3)Bi_(2)I_(9),single MASnI_(3),double Cs_(2)TiBr_(6))as optical-harvester has been numerically simulated by utilizing wxAMPS simulation software and achieved high power conversion efficiency(PCE)of 14.8834%.This is owing to the innovative architecture of PSCs favors efficient transport and extraction of more holes and the slender band gap MASnI_(3)extends the absorption spectrum to the near-infrared periphery compared with the two absorber layers architecture of PSCs.Moreover,the performance of the device with p-type-Cs_(3)Bi_(2)I_(9)/p-type-MASnI_(3)/n-type-Cs_(2)TiBr_(6)architecture is superior to the one with the p-type-Cs_(3)Bi_(2)I_(9)/ntype-MASnI_(3)/n-type-Cs_(2)TiBr_(6)architecture due to less carrier recombination and higher carrier life time inside the absorber layers.The simulation results reveal that Cs_(2)TiF_(6)double perovskite material stands out as the best alternative.Additionally,an excellent PCE of 21.4530%can be obtained with the thicker MASnI_(3)absorber layer thickness(0.4μm).Lastly,the highestperformance photovoltaic devices(28.6193%)can be created with the optimized perovskite doping density of around E15 cm^(3)(Cs_(3)Bi_(2)I_(9)),E18 cm^(3)(MASnI_(3)),and 1.5E19 cm^(3)(Cs_(2)TiBr_(6)).This work manifests that the proposed CTLs-free PSCs with multi-absorber layers shall be a relevant reference for forward applications in electro-optical and optoelectronic devices.

关 键 词：Multiple absorber layer PSCs CTLS-free·Inverted Narrow-band gap Simulation 

分 类 号：TM914.4[电气工程—电力电子与电力传动]