一种高电源抑制比低温度系数的带隙基准电路  

A High PSRR Bandgap Reference Circuit with Low Temperature Coefficient

作　　者：钟超超 孔瀛 莫艳图 宋奎鑫 康磊 梁庭[1] ZHONG Chaochao;KONG Ying;MO Yantu;SONG Kuixin;KANG Lei;LIANG Ting(State Key Laboratory of Dynamic Measurement Technology,North University of China,Taiyuan Shanxi 030051,China;Beijing Microelectronic Technology Institute,Aerospace Science and Technology Corporation,Beijing 100029,China)

机构地区：[1]中北大学省部共建动态测试技术国家重点实验室,山西太原030051 [2]中国航天科技集团公司北京微电子技术研究所,北京100029

出　　处：《电子器件》2024年第3期603-609,共7页Chinese Journal of Electron Devices

摘　　要：采用两种方式提高了带隙基准电路的电源抑制比。首先,采用峰值电流源结构将三极管自身的增益引入反馈环路,从而提高了环路增益和带隙基准核心的电源抑制比。其次,运用预调制电路进一步提高了电源抑制比。此外,还提出了一种仅需源极负反馈非对称电流镜的曲率补偿电路,该电路具有跨工艺的通用性。所提出的电路采用0.18μm BCD工艺进行了验证,并应用在一款降压DC-DC变换器中。结果表明,所提出的电路在2.4 V、3.3 V和5 V供电下,低频分别具有127 dB、134 dB和136 dB的高电源抑制比,同时实现了3.74×10^(-6)/℃的低温度系数,总电流消耗仅为6.3μA~14.5μA。The power supply rejection ratio of the bandgap reference circuit is improved by two ways.Firstly,the peak current source structure is used to introduce the gain of the transistor itself into the feedback loop,thereby improving the loop gain and the power supply rejection ratio of the bandgap reference core.Secondly,the pre-regulator is used to further improve the power supply rejection ratio.Besides,a curvature compensation circuit only requiring a source degeneration asymmetric current mirror is also proposed,which has cross-process versatility.The circuit proposed is verified using a 0.18μm BCD process and applied to a buck DC-DC convertor.The results show that the proposed circuit has high power supply rejection ratios of 127 dB,134 dB,and 136 dB at 2.4 V,3.3 V,and 5.0 V power supplies respectively,and achieves a low temperature coefficient of 3.74×10^(-6)/℃,with a total current consumption of only 6.3μA-14.5μA.

关 键 词：高电源抑制比 曲率补偿 峰值电流源 预调制电路 

分 类 号：TN702[电子电信—电路与系统]