星载微波组件GaAs放大芯片的失效分析  

Failure Analysis of GaAs Amplifier Chip in Spaceborne Microwave Module

作　　者：许冰 XU Bing(The 29th Research Institute of CETC,Chengdu 610036,China)

机构地区：[1]中国电子科技集团公司第二十九研究所,成都610036

出　　处：《电子工艺技术》2024年第4期15-19,28,共6页Electronics Process Technology

摘　　要：针对某星载微波组件老练试验中GaAs放大芯片失效问题,从内部目检、Ⅰ-Ⅴ特性测试、电致发光检测以及密封管壳内部气体成分检测方面进行了综合分析。问题定位于GaAs放大芯片“氢中毒”。通过试验,将微波组件金属管壳进行高温真空烘烤除氢,同时在组件中增加吸氢材料,能有效避免GaAs放大芯片“氢中毒”问题。A comprehensive analysis is conducted on the failure GaAs amplifier chips in the aging test of a certain spaceborne microwave module,including internal visual inspection,I-V characteristic test,electroluminescence test of the chip,and gas composition detection inside the sealed package shell.The cause of failure has been determined to be hydrogen effect.Through experiments,it has been proven that performing high-temperature vacuum baking on the metal shell and meanwhile adding hydrogen absorbing materials in the module can effectively avoid this problem.

关 键 词：微波组件 GaAs放大芯片 氢中毒 

分 类 号：TN605[电子电信—电路与系统]