影响晶圆凸点电镀质量的设备因素  

Equipment Factors Affecting the Quality of Wafer Bumps Electroplating

作　　者：段晋胜 闫瑛 王成君 DUAN Jinsheng;YAN Ying;WANG Chengjun(The 2nd Research Institute of CETC,Taiyuan 030024,China)

机构地区：[1]中国电子科技集团公司第二研究所,太原030024

出　　处：《电子工艺技术》2024年第4期38-40,44,共4页Electronics Process Technology

基　　金：国家重点研发计划项目(2022YFB3404300);科工局基础科研项目(JCKY2019210A002)。

摘　　要：随着异构集成模块功能提升和特征尺寸的不断增加,三维集成技术应运而生。凸点之间的互连是实现芯片三维叠层的关键,制备出高可靠性的微凸点对微电子封装技术的进一步发展具有重要意义。详细分析了影响晶圆凸点电镀质量的几种设备因素,包括电镀槽设计、电源系统、温度控制系统和电镀液循环系统,并提出了相应的优化建议。With the improvement of heterogeneous integration module functionality and the continuous increase in feature size,three-dimensional integration technology has emerged.The interconnection between wafer bumps is crucial for achieving three-dimensional stacking of chips,and the preparation of highly reliable micro bumps is of great signifi cance for the further development of microelectronic packaging technology.A detailed analysis is conducted on several equipment factors that affect the quality of wafer bumps electroplating,including electroplating tank design,power supply system,temperature control system,and electroplating solution circulation system,and corresponding optimization suggestions were proposed.

关 键 词：异构集成模块 晶圆凸点电镀 设备因素 

分 类 号：TN405[电子电信—微电子学与固体电子学]