Carbon nanotube integrated circuit technology:purification,assembly and integration  

作　　者：Jianlei Cui Fengqi Wei Xuesong Mei 

机构地区：[1]State Key Laboratory for Manufacturing Systems Engineering,Xi’an Jiaotong University,Xi’an 710049,People’s Republic of China

出　　处：《International Journal of Extreme Manufacturing》2024年第3期120-138,共19页极端制造（英文）

基　　金：supported by National Natural Science Foundation of China(Grant No.52022078);Shaanxi Provincial Key Research and Development Program(Grant No.2021ZDLGY10-02,2019ZDLGY01-09)。

摘　　要：As the manufacturing process of silicon-based integrated circuits(ICs)approaches its physical limit,the quantum effect of silicon-based field-effect transistors(FETs)has become increasingly evident.And the burgeoning carbon-based semiconductor technology has become one of the most disruptive technologies in the post-Moore era.As one-dimensional nanomaterials,carbon nanotubes(CNTs)are far superior to silicon at the same technology nodes of FETs because of their excellent electrical transport and scaling properties,rendering them the most competitive material in the next-generation ICs technology.However,certain challenges impede the industrialization of CNTs,particularly in terms of material preparation,which significantly hinders the development of CNT-based ICs.Focusing on CNT-based ICs technology,this review summarizes its main technical status,development trends,existing challenges,and future development directions.

关 键 词：carbon nanotubes integrated circuits field-effect transistors post-Moore 

分 类 号：TN405[电子电信—微电子学与固体电子学] TQ127.11[化学工程—无机化工] TB383.1[一般工业技术—材料科学与工程]