使用飞行时间二次离子质谱法判定痕量氧元素的测试方法  

A testing method for determining trace oxygen elements using time of flight secondary ion mass spectrometry

作　　者：冯殿福 崔云[2] 陶春先[1] 杨峰[3] 侯瑶 FENG Dianfu;CUI Yun;TAO Chunxian;YANG Feng;HOU Yao(School of Optical-Electrical and Computer Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China;Precision Optical Manufacturing and Testing Center,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Key Laboratory of Functional Crystals and Laser Technology,Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Beijing 100190,China)

机构地区：[1]上海理工大学光电信息与计算机工程学院,上海200093 [2]中国科学院上海光学精密机械研究所薄膜光学实验室,上海201800 [3]中国科学院理化技术研究所功能晶体与激光技术重点实验室,北京100190

出　　处：《理化检验（物理分册）》2024年第7期31-34,共4页Physical Testing and Chemical Analysis(Part A:Physical Testing)

摘　　要：采用飞行时间二次离子质谱法对CaF_(2)晶体、YF_(3)薄膜和Au薄膜中的痕量氧元素进行测试。结果表明:通过改变分析离子源光阑大小来改变离子束流,进而改变作用在试样表面的单位面积离子剂量,当离子束流增大时,CaF_(2)晶体与YF_(3)薄膜的氟离子、氧离子产额均增加,表明CaF_(2)晶体与YF_(3)薄膜中存在氧元素,测试结果与CaF_(2)的紫外光谱测试结果和YF_(3)薄膜的红外光谱测试结果相吻合;当离子束流增大时,金离子产额增加,而氧离子产额无明显变化,说明检测到的氧元素来自试验环境中的残余气体,Au膜中不存在氧元素。Trace oxygen elements in CaF_(2)crystal,YF_(3) thin films and Au thin films were tested using time of flight secondary ion mass spectrometry.The results show that by changing the size of the analytical ion source aperture to change the ion beam current,the unit area ion dose acting on the sample surface was changed.As the ion beam current increased,the fluoride and oxygen ion yields of CaF_(2)crystal and YF_(3) film both increased,indicating the presence of oxygen in CaF_(2)crystal and YF_(3) film.The test results were consistent with the UV spectrum test results of CaF_(2)and the infrared spectrum test results of YF_(3) film.When the ion beam current increased,the Au ion yield increased,while the oxygen ion yield showed no significant change,indicating that the detected oxygen element came from residual gas in the experimental environment,and there was no oxygen element present in the Au film.

关 键 词：飞行时间二次离子质谱 痕量元素 残余气体 离子束流 

分 类 号：TH838[机械工程—仪器科学与技术] TB31[机械工程—精密仪器及机械]