检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:Dingyi Shen Yejun Jin Zucheng Zhang Rong Song Miaomiao Liu Wei Li Xin Li Ruixia Wu Bo Li Jia Li Bei Zhao Xidong Duan
机构地区:[1]Hunan Key Laboratory of Two-Dimensional Materials,State Key Laboratory for Chemo/Biosensing and Chemometrics,College of Chemistry and Chemical Engineering,Hunan University,410082 Changsha,China [2]Key Laboratory of Quantum Materials and Devices of Ministry of Education,School of Physics,Southeast University,Nanjing 211189,China [3]Key Laboratory of Two-Dimensional Materials,State Key Laboratory for Chemo/Biosensing and Chemometrics,College of Chemistry and Chemical Engineering,Hunan University,410082 Changsha,China
出 处:《Precision Chemistry》2024年第7期282-299,共18页精准化学(英文)
基 金:We acknowledge the support from the National Key R&D Program of the Ministry of Science and Technology of China(No.2022YFA1203801);the National Natural Science Foundation of China(grant numbers 51991340,51991343,52221001,62205055);the Hunan Key R&D Program Project(No.2022GK2005);Natural Science Foundation of Jiangsu Province(BK20220860).
摘 要:Two-dimensional(2D)transition metal dichalcogenides(TMDs)have garnered widespread interest in the scientific community and industry for their exceptional physical and chemistry properties,and great potential for applications in diverse fields including(opto)electronics,electrocatalysis,and energy storage.Chemical vapor deposition(CVD)is one of the most compelling growth methods for the scalable growth of high-quality 2D TMDs.However,the conventional CVD process for synthesis of 2D TMDs still encounters significant challenges,primarily attributed to the high melting point of precursor powders,and achieving a uniform distribution of precursor atmosphere on the substrate to obtain controllable smaple domains is difficult.The spin-coating precursor mediated chemical vapor deposition(SCVD)strategy provides refinement over traditional methods by eliminating the use of solid precursors and ensuring a more clean and uniform distribution of the growth material on the substrate.Additionally,the SCVD process allows fine-tuning of material thickness and purity by manipulating solution composition,concentration,and the spin coating process.This Review presents a comprehensive summary of recent advances in controllable growth of 2D TMDs with a SCVD strategy.First,a series of various liquid precursors,additives,source supply methods,and substrate engineering strategies for preparing atomically thin TMDs by SCVD are introduced.Then,2D TMDs heterostructures and novel doped TMDs fabricated through the SCVD method are discussed.Finally,the current challenges and perspectives to synthesize 2D TMDs using SCVD are discussed.
关 键 词:SPIN-COATING Chemical vapor deposition Liquid precursor Substrate Two-dimensional materials HETEROSTRUCTURE DOPING Film
分 类 号:TG14[一般工业技术—材料科学与工程]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:3.142.200.134