基于磁耦合谐振腔的可重构宽带匹配电路  

Reconfigurable Wideband Matching Network Based on Magnetically Coupled Resonator Tank

作　　者：李航标 LI Hangbiao(Southwest China Institute of Electronic Technology,Chengdu 610036,China)

机构地区：[1]中国西南电子技术研究所,成都610036

出　　处：《电讯技术》2024年第7期1147-1155,共9页Telecommunication Engineering

摘　　要：为了降低工艺波动、版图二阶效应、模型偏差等非理想因素对射频集成电路(Radio Frequency Integrated Circuit,RFIC)性能造成的不良影响,提出了一种基于磁耦合谐振腔的可重构宽带匹配电路(Reconfigurable Wideband Matching Network Based on Magnetically Coupled Resonator Tank,MCR-RWM)。通过数字控制电路配置可调电阻阵列和可调电容阵列,改变匹配电路增益、带宽、增益平坦度、纹波等参数,实现宽带匹配电路重构。在65 nm互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)工艺设计了一款基于MCR-RWM的驱动放大器并集成于接收芯片。测试结果显示,在18.2~20.2 GHz频率范围,通过数字控制电路重构驱动放大器的宽带匹配,接收通道的S_(22)改善了3.5 dB,S_(21)提升了0.5 dB,增益平坦度改善了0.1 dB,-3 dB带宽增大了113 MHz。In order to reduce the adverse effects of non-ideal factors such as process fluctuations,layout second-order effects and model deviations on the performance of radio frequency integrated circuit(RFIC),a reconfigurable wideband matching network based on a magnetically coupled resonator tank(MCR-RWM)is proposed.By configuring adjustable resistor arrays and adjustable capacitor arrays through a digital control circuit,parameters such as gain,bandwidth,gain flatness,and ripple of the matching network can be changed to achieve wideband matching network reconfiguration.In 65 nm complementary metal oxide semiconductor(CMOS)process,a driver amplifier based on the MCR-RWM is designed and integrated into a receiver.The measurement results of the receiver show that in 18.2~20.2 GHz by configuring the wideband matching network of the driver amplifier through the digital control circuit,the S_(22) can be improved by 3.5 dB,the S_(21) can be improved by 0.5 dB,the gain flatness can be improved by 0.1 dB,and the-3 dB bandwidth can be improved by 113 MHz.

关 键 词：射频集成电路 可重构宽带匹配 磁耦合谐振腔 驱动放大器 工艺波动 

分 类 号：TN432[电子电信—微电子学与固体电子学]