V频段宽带高效率功率合成放大器设计  

Design of a V-band High Efficiency Power-combining Amplifier

作　　者：胡顺勇 HU Shunyong(Southwest China Institute of Electronic Technology,Chengdu 610036,China)

机构地区：[1]中国西南电子技术研究所,成都610036

出　　处：《电讯技术》2024年第7期1156-1162,共7页Telecommunication Engineering

摘　　要：介绍了一种基于混合波导魔T的V频段宽带高效率功率合成放大器。采用混合波导魔T结构和超宽带扇形开路薄膜电阻,设计了一款覆盖整个V频段的新型小型化高隔离二路功分器,实测在50~75 GHz频率范围内,平均电路损耗0.2 dB,输入回波小于-20 dB,隔离和输出回波小于-14 dB。基于该电路结构,采用V频段宽带GaN功放芯片,研制了一种3.5 W功率模块,以该功率模块为基本单元,并采用16路高效率功率分配/合成网络,研制出一款V频段宽带高效率功率合成放大器。实测在50~75 GHz的V频段全频段范围内,连续波饱和输出功率大于47 dBm,小信号增益大于46 dB,合成效率全频带内大于82%,在全频段实现了高效率合成和大功率输出。该电路结构紧凑,工作频带宽,合成效率高且便于散热,具有很好的工程应用价值。A V-band broadband high efficiency power-combining amplifier based on waveguide hybrid magic T is introduced.A novel miniaturized high isolation two-way power divider covering the entire V-band is designed using the waveguide hybrid magic T structure and an ultra-wideband fan-shaped open circuit thin film resistor.In 50~75 GHz,the measured average insertion loss is 0.2 dB,the input return loss is less than-20 dB,and the isolation and output return loss are less than-14 dB.Based on this circuit structure,a 3.5 W power module is developed using a V-band broadband GaN power amplifier chip.A V-band broadband high efficiency power-combining amplifier is developed using this power module as the basic unit and the 16-way high-efficiency power dividing/combining network.The test results show that in the full frequency range of the V-band,the continuous wave saturated output power is more than 47 dBm,the small signal gain is more than 46 dB,and the power-combining is more than 82%,high combining efficiency and large output power is achieved in the whole V-band.The circuit has a compact structure,wide operating frequency band,high power combining efficiency,and is easy to dissipate heat,making it highly valuable for engineering applications.

关 键 词：功率合成放大器 V频段 混合魔T结构 

分 类 号：TN819.1[电子电信—信息与通信工程]