Sm掺杂对Si BCN陶瓷显微结构及其微波衰减性能的影响  

Effect of Sm Doping on Microstructure of SiBCN Ceramics and Its Microwave Attenuation Performance

作　　者：杨权 李享成[1] 陈平安[1] 朱颖丽 朱伯铨[1] YANG Quan;LI Xiangcheng;CHEN Pingan;ZHU Yingli;ZHU Boquan(The State Key Laboratory of Refractories and Metallurgy,Key Laboratory of High Temperature Electromagnetic Materials and Structure of MOE,Wuhan University of Science and Technology Wuhan 430081,China)

机构地区：[1]武汉科技大学,省部共建耐火材料与冶金国家重点实验室,高温电磁材料与结构教育部重点实验室,武汉430081

出　　处：《硅酸盐学报》2024年第6期1969-1977,共9页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金项目(51972242);湖北省自然科学基金创新群体项目(2020CFA038);湖北省重点研发计划项目(2020BAA028);湖北省重大项目(2023BAA003)和湖北省青年拔尖人才培养计划。

摘　　要：电磁波强衰减材料是解决电磁污染、保护人类身体健康和提高电子设备兼容性的重要途径。本工作研究了Sm掺杂对SiBCN复合陶瓷的显微结构和介电性能的影响,并分析了电磁波的衰减机制。结果表明,Sm促进了SiBCN陶瓷中SiC、SiCN等电介质晶体的生成,这些电介质提高了陶瓷对微波的衰减性能。当陶瓷厚度为2 mm时,最低反射损耗在17.36GHz处达到了–40.00 dB,有效吸收带宽为5.12 GHz。本工作为制备具有强电磁波损耗的聚合物陶瓷提供了新策略。Introduction In recent years,5G communication and smart devices become popular,but the electromagnetic pollution that they produce affects human-being health and the normal operation of electronic devices.Therefore,electromagnetic wave strong attenuation materials have attracted much attention,especially polymer-derived ceramics(PDCs)due to their tunable microstructure and superior high-temperature performance.The amorphous structure of the ceramics has a high-temperature stability,but the dielectric constants are low,making them weak to electromagnetic wave dissipation.To address this problem,catalysts for increasing heat treatment temperature or direct addition of high conductive loss phases(CNTs,RGO,etc.)are usually used to improve the attenuation ability of the ceramics to electromagnetic waves.Rare-earth element metals can modulate the electronic energy band structure of the materials due to the presence of empty d-orbitals,thus modulating their optical,electrical,and magnetic properties.In this paper,the effect of samarium doping on the microstructure and dielectric properties of SiBCN ceramics was thus investigated via introducing the transition metal Sm into polyborosilazane as a catalyst.Methods Based on the'Schlenk'technology,20 mL THF,21 mL DCMVS and 24 mL borane dimethyl sulfide complex were slowly added to a reaction bottle in an ice bath,and the reaction was carried out in argon atmosphere for 24 h to obtain dichlorodimethylsilylethylborane(TDSB).Afterwards,11 mL DCMS and 72 mL HMDZ were stirred in a three-neck flask at room temperature for 24 h.The reaction bottle was heated at 110℃for 4 h to remove THF,trichloromethylsilane and other by-products,and was further heated at 170℃for 3 h.After three cycles of filtration,a yellow viscous precursor was obtained.To obtain Sm-containing polyborosilazane,PBSZ was weighed and dissolved in THF before SmCl3 dissolving in DMF was added.The precursors without and with different SmCl3 mass fractions of 0,1%and 3%were named as samples PS0,PS1 and PS3.The PBSZ

关 键 词：硅硼碳氮陶瓷 钐掺杂 显微结构 介电性能 

分 类 号：TQ174.75[化学工程—陶瓷工业]