Texture and Se vacancy optimization induces high thermoelectric performance in Bi_(2)Se_(3) flexible thin films  

作　　者：Dong-Wei Ao Wei-Di Liu Yue-Xing Chen Fan Ma Yi-Jie Gu Zhuang-Hao Zheng 

机构地区：[1]School of Machinery and Automation,Weifang University,Weifang 261061,China [2]Australian Institute for Bioengineering and Nanotechnology,The University of Queensland,Brisbane 4072,Australia [3]Shenzhen Key Laboratory of Advanced Thin Films and Applications,Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen518060,China [4]School of Materials Science and Engineering,Inner Mongolia University of Technology,Hohhot 010051,China

出　　处：《Rare Metals》2024年第6期2796-2804,共9页稀有金属（英文版）

基　　金：financially supported by the Natural Science Foundations of Shandong Province(No.ZR2023ME001);the China Postdoctoral Science Foundation(No.2023M732609);ShangRao City of Jiangxi Province(China)(No.2022A006);Doctoral Research Initiation Fund of Weifang University(No.2023BS01)。

摘　　要：Bi_(2)Se_(3)-based flexible thin film with high thermoelectric performance is promising for the waste heat recovery technology.In this work,a novel post-selenization method is employed to prepare n-type Bi_(2)Se_(3)flexible thin films with highly textured structure.The strengthened texture and Se vacancy optimization can be simultaneously achieved by optimizing the selenization temperature.The highly oriented texture leads to the increased carrier mobility and results in a high electric conductivity of~290.47 S·cm^(-1)at 623 K.Correspondingly,a high Seebeck coefficient(>110μW·K-1)is obtained due to the reduced carrier concentration,induced by optimizing vacancy engineering.Consequently,a high power factor of 3.49μW·cm^(-1)·K^(-2)at 623 K has been achieved in asprepared highly-bendable Bi_(2)Se_(3)flexible thin films selenized at 783 K.This study introduces an effective post-selenization method to tune the texture structure and vacancies of Bi_(2)Se_(3)flexible thin films,and correspondingly achieves high thermoelectric performance.

关 键 词：THERMOELECTRIC Bi_(2)Se_(3) Flexible thin film Post-selenization 

分 类 号：TB383.2[一般工业技术—材料科学与工程]