高密度Cu/Ni/SnAg凸点的热压焊接工艺研究  

Research on thermal compression bonding of high density Cu/Ni/SnAg microbumps

作　　者：柯峥 高艳 叶刚 刘书利 王刚 KE Zheng;GAO Yan;YE Gang;LIU Shu-Li;WANG Gang(The 58th Research Institute of CETC)

机构地区：[1]中国电子科技集团公司第五十八研究所

出　　处：《中国集成电路》2024年第7期76-80,共5页China lntegrated Circuit

摘　　要：本文采用两种加热方式完成了节距为70μm的Cu/Ni/SnAg1.8凸点热压焊接。结果表明压头与平台均加热至250℃的热压焊接焊点质量良好,无桥接和虚焊缺陷;金属间化合物(Cu,Ni)6Sn5生长完整且连续,厚度约1.38μm;电路剪切强度合格;平台保持150℃恒温时,压头加热温度逐渐升高时,金属间化合物(Cu,Ni)6Sn5生长逐渐变得完整且连续,厚度逐渐变大,电阻先增大后减小,剪切强度逐渐增大。当平台保持150℃恒温时,压头加热温度为350℃时,电路的电阻、金属间化合物厚度和剪切强度与压头与平台均加热至250℃的电路相当,此工艺为Chip-to-Wafer(C2W)热压焊接工艺提供了数据支撑。In this study,the thermal compression bonding using 70μm-pitch Cu/Ni/SnAg1.8 pillar with two heating method was successfully demonstrated.Results showed that as both the top bonding head and the bottom plate were heating to 250℃,the solder joints were in good quality and no bridging joints or cold joints were observed,the intermetallic compounds(Cu,Ni)6Sn5 grew up completely and continuously and the thickness was about 1.38μm,the shear strength of flip chip was qualified.When the bottom plate was kept at 150℃,as the heating temperature of top bonding head increased,the growth of intermetallic compounds(Cu,Ni)6 Sn5 gradually became complete and continuous,the thickness gradually increased,the resistance firstly increased and then decreased,and the shear strength increased gradually.When the temperature of bottom plate was kept at 150℃and the heating temperature of the bonding head was 350℃,the resistance,intermetallic compound thickness,and shear strength of the circuit were equivalent to those of the circuit where both the bonding head and the bottom plate were heated to 250℃.This process provided data support for the Chip to Wafer(C2W)thermal compression bonding process.

关 键 词：热压焊接 金属间化合物 剪切强度 

分 类 号：TN405[电子电信—微电子学与固体电子学]