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作 者:徐宁 陈显春 徐佳馨 王晓鸿[1] 邱龙臻[1] XU Ning;CHEN Xianchun;XU Jiaxin;WANG Xiaohong;QIU Longzhen(National Engineering Laboratory of Special Display Technology,Anhui Province Key Laboratory of Measuring Theory and Precision Instrument,Institute of Optoelectronics,Hefei University of Technology,Hefei 230009,China;Silica-Based Materials Laboratory of Anhui Province,China National Building Materials Research Institute for Advanced Glass Materials Group Co.Ltd.,Bengbu 233000,China)
机构地区:[1]合肥工业大学光电技术研究院特种显示技术国家工程实验室,测量理论与精密仪器安徽省重点实验室,安徽合肥230009 [2]中建材玻璃新材料研究院集团有限公司硅基材料安徽省实验室,安徽蚌埠233000
出 处:《液晶与显示》2024年第7期867-874,共8页Chinese Journal of Liquid Crystals and Displays
基 金:国家自然科学基金(No.52273172,No.62274053);国家重点研发计划(No.2022YFE0198200);安徽省科技重大专项(No.2021e03020007);合肥市自然科学基金(No.2022031,No.2022002);硅基材料安徽省实验室开放课题基金。
摘 要:有机半导体材料因具备良好的溶液加工性以及优异的电荷传输性能,在柔性器件中展现出广阔的应用前景。本文介绍了一种制备可拉伸半导体材料的方法。该方法利用二苯甲酮光引发将3,6-二噻吩-2-基-2,5-二氢吡咯并[3,4-c]吡咯-1,4-二酮基共轭聚合物(4Si)与聚二甲基硅氧烷进行光交联,研究了聚合物薄膜交联前后的电学性能和机械性能变化。结果显示,与未交联的4Si以及共混薄膜相比,交联薄膜的电学性能略微下降,但是机械性能得到了提升,起始裂纹应变由30%增加到50%。在100%的应变下,交联薄膜在平行应变方向上的迁移率为0.36 cm^(2)·V^(-1)·s^(-1),是初始迁移率的1.44倍。Organic semiconductor materials exhibit promising prospects for flexible device applications due to their excellent solution processability and superior charge transport performance.This work proposed a method for preparing a stretchable organic semiconductor material.By using benzophenone as a photoinitiator,the conjugated polymer 3,6-dithiophene-2-yl-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-diketone(4Si)was crosslinked with polydimethylsiloxane.The alterations in the electrical and mechanical properties of the polymer films were thoroughly investigated on both pre-and post-crosslinking.Compared to the uncrosslinked 4Si and blend films,the electrical properties of the crosslinked films slightly decreased,while the mechanical properties were enhanced.The crack onset-strain has increased from 30%to 50%.Furthermore,at 100%strain,the crosslinked film exhibited a mobility of 0.36 cm^(2)·V^(-1)·s^(-1)1 in the parallel strain direction,which is 1.44 times higher than the initial mobility.
分 类 号:TN304.5[电子电信—物理电子学]
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