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作 者:吴加其 王程杨 陆红波 朱俊[1,2] WU Jiaqi;WANG Chengyang;LU Hongbo;ZHU Jun(School of Chemistry and Chemical Engineering,Hefei University of Technology,Hefei 230009,China;National Engineering Laboratory of Special Display Technolgy,Academy of Opto-electric Technology,Hefei University of Technology,Hefei 230009,China)
机构地区:[1]合肥工业大学化学与化工学院,安徽合肥230009 [2]合肥工业大学光电技术研究院特种显示技术国家工程实验室,安徽合肥230009
出 处:《液晶与显示》2024年第7期875-882,共8页Chinese Journal of Liquid Crystals and Displays
基 金:国家自然科学基金(No.52302237);安徽省自然科学基金(No.2308085ME137)。
摘 要:钙钛矿量子点发光二极管是极具发展潜力的新型显示技术。全无机CsPbX3(X=Cl,Br,I)钙钛矿量子点具有优异的光电性能,然而合成CsPbX3量子点时往往需要油酸(OA)和油胺(OAm)等配体的参与,这些配体和量子点之间的动态结合方式使其极易从量子点表面脱落,进而引发量子点的不稳定性现象。此外,油酸油胺的绝缘特性会阻碍发光二极管中载流子的传输并恶化器件性能。鉴于此,本文以CsPbBr_(3)量子点为研究对象,采用短链配体2-己基癸酸(DA)部分取代长链OA配体,系统探究了不同DA/OA摩尔比对CsPbBr_(3)量子点光学性能的影响。结果表明,经DA修饰的CsPbBr_(3)量子点表现出高达88.64%的光致发光量子产率。随后,将优化后的CsPbBr_(3)量子点应用到全溶液制备的发光二极管中,器件的最高亮度和最大外量子效率分别从9 cd·m^(-2)和0.04%提升至155 cd·m^(-2)和0.14%。接着,通过优化钙钛矿发光层和空穴传输层之间的能级匹配,进一步将器件的亮度和外量子效率提升至436 cd·m^(-2)和0.20%。Perovskite quantum dot(QD)light-emitting diodes are novel generation display technique with great potential.All-inorganic CsPbX3(X=Cl,Br,I)QDs exhibit excellent optoelectronic properties.However,the synthesis of CsPbX3 QDs usually requires the long-chain ligands such as oleic acid(OA)and oleylamine(OAm).The dynamic binding between these ligands and QDs makes them easily detach from the QD surface,thereby leading to the poor stability.In addition,the insulating properties of OA and OAm are not conducive to the charge transfer.In this work,we adopt the strategy of replacing OA with 2-hexyldecanoic acid(DA)partially,systematically studying the influence of DA/OA molar ratios on the optical properties of CsPbBr_(3)QDs.The results show that CsPbBr_(3)QDs modified by DA exhibit a high photoluminescence quantum yield of 88.64%.Based on this strategy,the all-solution-processed lightemitting diodes achieve the luminance of 155 cd·m^(-2)and external quantum efficiency(EQE)of 0.14%.Subsequently,by optimizing the energy levels between the perovskite layer and the hole transport layer,the luminance and EQE are further improved to 436 cd·m^(-2)and 0.20%.
关 键 词:CsPbBr_(3)量子点 新型显示技术 发光二极管 配体取代 全溶液制备
分 类 号:TN383.2[电子电信—物理电子学]
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