Impact of oxygen incorporation on interface optimization and defect suppression for efficiency enhancement in Cu_(2)ZnSn(S,Se)_(4)solar cells  

作　　者：Shicheng Deng Songfan Wang Yuanyuan Wang Qian Xiao Yuena Meng Dongxing Kou Wenhui Zhou Zhengji Zhou Zhi Zheng Sixin Wu 

机构地区：[1]Key Laboratory for Special Functional Materials of MOE,National&Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology,School of Materials,Henan University,Kaifeng 475004,Henan,China [2]Key Laboratory of Micro-Nano Materials for Energy Storage and Conversion of Henan Province,Institute of Surface Micro and Nano Materials,College of Chemical and Materials Engineering,Xuchang University,Xuchang 461000,Henan,China

出　　处：《Journal of Energy Chemistry》2024年第8期77-85,I0003,共10页能源化学（英文版）

基　　金：supported by the National Natural Science Foundation of China(62074052,61974173,52072327);the Joint Talent Cultivation Funds of NSFC-HN(U1904192);the Science and Technology Innovation Talents in Universities of Henan Province(21HASTIT023)。

摘　　要：Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells suffer from severe carrier recombination,limiting the photovoltaic performance.Unfavorable energy band alignment at the p-n junction and defective front interface are two main causes.Herein,oxygen incorporation in CZTSSe via absorber air-annealing was developed as a strategy to optimize its surface photoelectric property and reduce the defects.With optimized oxygen incorporation conditions,the carrier separation and collection behavior at the front interface of the device is improved.In particular,it is found that oxygen incorporated absorber exhibits increased band bending,larger depletion region width,and suppressed absorber defects.These indicate the dynamic factors for carrier separation become stronger.Meanwhile,the increased potential difference between grain boundaries and intra grains combined with the decreased concentration of interface deep level defect in the absorber provide a better path for carrier transport.As a consequence,the champion efficiency of CZTSSe solar cells has been improved from 9.74%to 12.04%with significantly improved open-circuit voltage after optimized air-annealing condition.This work provides a new insight for interface engineering to improve the photoelectric conversion efficiency of CZTSSe devices.

关 键 词：KESTERITE Thin film solar cell Interface optimization Surface oxidation Defect suppression 

分 类 号：TM914.4[电气工程—电力电子与电力传动]