Impact of Quantum Coherence on Inelastic Thermoelectric Devices:From Diode to Transistor  

作　　者：曹蓓 韩崇泽 郝翔 王晨 陆金成 Bei Cao;Chongze Han;Xiang Hao;Chen Wang;Jincheng Lu(Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application,School of Physical Science and Technology,Suzhou University of Science and Technology,Suzhou 215009,China;Department of Physics,Zhejiang Normal University,Jinhua 321004,China)

机构地区：[1]Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application,School of Physical Science and Technology,Suzhou University of Science and Technology,Suzhou 215009,China [2]Department of Physics,Zhejiang Normal University,Jinhua 321004,China

出　　处：《Chinese Physics Letters》2024年第7期117-125,共9页中国物理快报（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No.12305050);Jiangsu Key Disciplines of the Fourteenth Five-Year Plan (Grant No.2021135);the Natural Science Foundation of Jiangsu Higher Education Institutions of China (Grant No.23KJB140017);the Opening Project of Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology。

摘　　要：We present a study on inelastic thermoelectric devices, wherein charge currents and electronic and phononic heat currents are intricately interconnected. The employment of double quantum dots in conjunction with a phonon reservoir positions them as promising candidates for quantum thermoelectric diodes and transistors. We illustrate that quantum coherence yields significant charge and Seebeck rectification effects. It is worth noting that, while the thermal transistor effect is observable in the linear response regime, especially when phononassisted inelastic processes dominate the transport, quantum coherence does not enhance thermal amplification.Our work may provide valuable insights for the optimization of inelastic thermoelectric devices.

关 键 词：QUANTUM CHARGE QUANTUM 

分 类 号：TN31[电子电信—物理电子学] TN32