Physico−mathematical model of the voltage−current characteristics of light-emitting diodes with quantum wells based on the Sah−Noyce−Shockley recombination mechanism  

作　　者：Fedor I.Manyakhin Dmitry O.Varlamov Vladimir P.Krylov Lyudmila O.Morketsova Arkady A.Skvortsov Vladimir K.Nikolaev 

机构地区：[1]Dinamics,Strength of Machines and Resisance of Materials,Moscow Polytechnic University,Russia [2]Biomedical and Electronic Means and Technologies,Vladimir State University,Russia [3]Computer-Aided Design and Engineering,National University of Science and Technology"MISiS",Russia

出　　处：《Journal of Semiconductors》2024年第8期25-33,共9页半导体学报（英文版）

基　　金：conducted within the state assignment of the Ministry of Science and Higher Education for universities(Project No.FZRR-2023-0009).

摘　　要：Herein,a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells(QWs)is prepared using the Sah−Noyce−Shockley(SNS)recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration.A comparison of the model voltage−current characteristics(VCCs)with the experimental ones reveals their adequacy.The technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10Å.The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4.

关 键 词：light-emitting diodes with quantum wells voltage−current relation nonideality factor recombination mechanism Sah−Noyce−Shockley model 

分 类 号：TN312.8[电子电信—物理电子学]