Plasmon-enhanced ultra-high photoresponse of single-wall carbon nanotube/copper/silicon near-infrared photodetectors  

作　　者：Yi-Ming Zhao Xian-Gang Hu Chao Chen Zuo-Hua Wang An-Ping Wu Hong-Wang Zhang Peng-Xiang Hou Chang Liu Hui-Ming Cheng 

机构地区：[1]Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,China [2]School of Materials Science and Engineering,University of Science and Technology of China,Shenyang 110016,China [3]National Engineering Research Center for Equipment and Technology of Cold Strip Rolling,College of Mechanical Engineering,Yanshan University,Qinhuangdao 066004,China [4]Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality,Shenzhen Institute of Advanced Technology,Chinese Academy of Sciences,Shenzhen 518055,China

出　　处：《Nano Research》2024年第7期5930-5936,共7页纳米研究（英文版）

基　　金：supported by the Ministry of Science and Technology of China(No.2022YFA1203303);the National Natural Science Foundation of China(Nos.52072375,52130209,and 52188101);Liaoning Revitalization Talents Program(No.XLYC2002037);the Basic Research Project of Natural Science Foundation of Shandong Province(No.ZR2019ZD49).

摘　　要：Single wall carbon nanotube(SWCNT)/Si heterojunction photodetectors have the advantages of high photoresponse ability and simple structure,however,their detection wavelength range are usually lower than 1100 nm,which limits their application in the infrared band.We report a SWCNT/Cu/Si photodetector with both a high photoresponse and a detection range up to the infrared band by depositing a Cu nanoparticles(NPs)layer between a SWCNT film and a n-Si substrate.It was found that the Cu NPs produce strong surface plasmon resonance(SPR)under laser irradiation,which breaks through the limitation of Si band gap and greatly improves the photoresponse of the SWCNT/Cu/Si photodetector in the near infrared band.The responsivity(R)of the photodetector in the wavelength range of 1850–1200 nm reached 2.2–14.15 mA/W,which is the highest value in the reported plasmon enhanced n-Si based photodetectors,and about 20,000 times higher than that of a SWCNT/Si photodetector.Its R value for 1550 nm wavelength used in optical communications reached~8.2 mA/W,which is 64%higher than the previously reported values of commonly used photodetectors.We attribute the significant increase to the strong SPR and low Schottky barrier of Cu with n-Si,which facilitates the generation and transfer of the carriers.

关 键 词：single wall carbon nanotube PHOTODETECTOR silicon surface plasmon resonance copper 

分 类 号：TB383[一般工业技术—材料科学与工程]