On-chip integrated GeSe_(2)/Si vdW heterojunction for ultravioletenhanced broadband photodetection,imaging,and secure optical communication  

作　　者：Zhiman Zhou Kunxuan Liu Di Wu Yunrui Jiang Ranran Zhuo Pei Lin Zhifeng Shi Yongtao Tian Wei Han Longhui Zeng Xinjian Li 

机构地区：[1]School of Physics and Microelectronics,Key Laboratory of Material Physics Ministry of Education,Zhengzhou University,Zhengzhou 450052,China [2]Department of Electrical and Computer Engineering,University of California San Diego,La Jolla,California 92093,USA [3]Institute of Microelectronics and Integrated Circuits,School of Microelectronics,Hubei University,Wuhan 430062,China

出　　处：《Nano Research》2024年第7期6544-6549,共6页纳米研究（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(Nos.62374149,U2004165,and U22A20138);Key Research Project for Higher Education Institutions in Henan Province(No.24B140010).

摘　　要：Broadband photodetection,spanning from ultraviolet(UV)to infrared(IR),is pivotal in diverse technological domains including astronomy,remote sensing,environmental monitoring,and medical diagnostics.However,current commercially available broadband photodetectors,predominately based on conventional narrow-bandgap semiconductors,exhibit limited sensitivity in the UV region.This limitation,stemming from the significant energy disparity between the semiconductor bandgap and UV photon,narrows their application scope.Herein,we report an innovative approach involving the in-situ van der Waals(vdW)integration of two-dimensional(2D)GeSe_(2)layers onto a Si substrate.This process yields a high-quality GeSe_(2)/Si vdW heterojunction device,which features a broad response range covering from UV to near-IR(NIR)with a greatly-enhanced sensitivity in the UV region.The device possesses high responsivities of 325 and 533.4 mA/W,large detectivities of 1.24×10^(13)and 2.57×10^(13)Jones,and fast response speeds of 20.6/82.1 and 17.7/81.0μs under 360 and 980 nm,respectively.Notably,the broadband image sensing and secure invisible optical communication capabilities of the GeSe_(2)/Si heterojunction device are demonstrated.Our work provides a viable approach for UV-enhanced broadband photodetection technology,opening up new possibilities and applications across various scientific and technological domains.

关 键 词：germanium diselenide van der Waals(vdW)integration ultraviolet enhanced broadband photodetection IMAGING 

分 类 号：TN929.1[电子电信—通信与信息系统]