基于X切薄膜铌酸锂的4×4 MMI耦合器的设计和制造  

Design and fabrication of a 4×4 MMI coupler based on X-cut thin-film lithium niobate

作　　者：邓冶 李坚平 张振荣[1] DENG Ye;LI Jianping;ZHANG Zhenrong(School of Computer and Electronic Information,Guangxi University,Nanning 530004,China)

机构地区：[1]广西大学计算机与电子信息学院,南宁530004

出　　处：《光通信技术》2024年第4期54-57,共4页Optical Communication Technology

基　　金：广西科学基金重点项目(批准号:2021GXNSFDA076001)资助;广西创新驱动发展专项(批准号:桂科AA21077021)资助。

摘　　要：针对多模干涉(MMI)耦合器存在尺寸大、插入损耗高、工艺复杂的问题,在基于X切薄膜铌酸锂(X-cut TFLN)平台上设计了一种基于横电(TE)模式的4×4 MMI耦合器,采用三维时域有限差分(FDTD)方法对MMI区域长度及宽度进行仿真优化,最后根据优化结果并利用电感耦合等离子体(ICP)刻蚀方法在该平台上制造4×4 MMI耦合器。仿真结果表明,优化后的4×4 MMI耦合器总插入损耗为0.36 dB,实际测量插入损耗为0.78 dB。Aiming at the problems of large size,high insertion loss,and complex process of multi-mode interference(MMI)cou-pler,a 4×4 MMI coupler based on transverse electric(TE)mode is designed on the platform of X-cut thin-film lithium niobate(X-cut TFLN).The length and width of the MMI region are simulated and optimized using the three-dimensional finite-differ-ence time-domain(FDTD)method.Finally,a 4×4 MMI coupler is manufactured on the platform using inductive coupled plasma(ICP)etching method according to the optimization results.The simulation results show that the total insertion loss of the opti-mized 4×4 MMI coupler is 0.36 dB,and the actual measured insertion loss is 0.78 dB.

关 键 词：薄膜铌酸锂 多模干涉耦合器 光子集成 低插入损耗 电感耦合等离子体刻蚀 

分 类 号：TN432[电子电信—微电子学与固体电子学]