基于机械剥离制备的PEDOT:PSS/β-Ga_(2)O_(3)微米片异质结紫外光电探测器研究  

Performance of UV photodetector of mechanical exfoliation prepared PEDOT:PSS/β-Ga_(2)O_(3) microsheet heterojunction

作　　者：宜子琪 王彦明 王硕[1] 隋雪 石佳辉 杨壹涵 王德煜 冯秋菊[1] 孙景昌[1] 梁红伟[2] Yi Zi-Qi;Wang Yan-Ming;Wang Shuo;Sui Xue;Shi Jia-Hui;Yang Yi-Han;Wang De-Yu;Feng Qiu-Ju;Sun Jing-Chang;Liang Hong-Wei(School of Physics and Electronic Technology,Liaoning Normal University,Dalian 116029,China;School of Integrated Circuits,Dalian University of Technology,Dalian 116024,China)

机构地区：[1]辽宁师范大学物理与电子技术学院,大连116029 [2]大连理工大学集成电路学院,大连116024

出　　处：《物理学报》2024年第15期172-178,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:12075045);大连市科技创新基金(批准号:2023JJ12GX016,2023JJ12GX013,2022JJ12GX023);辽宁师范大学2022年高端科研成果培育资助计划(批准号:22GDL002);辽宁师范大学教育教学改革研究项目(批准号:LSJGJXFF202330)资助的课题

摘　　要：β-Ga_(2)O_(3)具有超宽带隙(约4.9 eV)、高的击穿电场(约8 MV/cm)、良好的化学稳定性和热稳定性等优点,是一种很有前途的制备紫外光电探测器的候选材料.由于未掺杂的β-Ga_(2)O_(3)为n型导电,所以制备p型β-Ga_(2)O_(3)面临很多困难,从而制约了同质PN结的开发与应用.聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸(PEDOT:PSS)是一种p型导电聚合物,在250—700 nm有着较高的透明度,采用p型有机材料PEDOT:PSS和n型β-Ga_(2)O_(3)构成的异质结可能为PN结型光电器件的研制提供一种途径.本文利用机械剥离法从β-Ga_(2)O_(3)单晶衬底上剥离出单根β-Ga_(2)O_(3)微米片,微米片的长度为4 mm,宽度为500μm,厚度为57μm.将有机材料PEDOT:PSS涂覆在剥离出来的微米片的一侧制备出PEDOT:PSS/β-Ga_(2)O_(3)无机-有机异质结的紫外光电探测器,器件表现出典型的整流特性,而且发现器件对254 nm紫外光敏感,具有良好的自供电性能.该异质结紫外探测器的响应度和外量子效率分别为7.13 A/W和3484%,上升时间和下降时间分别为0.25 s和0.20 s.此外,3个月后器件对254 nm紫外光的探测性能并未发现明显的衰减现象.本文的相关研究工作将对研发新型紫外探测器提供了新的思路和理论基础.Ultrawide-bandgap(4.9 eV)β-Ga_(2)O_(3) material possesses exceptional properties such as a high criticalbreakdown field(~8 MV/cm)and robust chemical and thermal stability.However,due to the challenges in the growth of p-typeβ-Ga_(2)O_(3),the preparation of homojunction devices is difficult.Therefore,the utilization of heterojunctions based onβ-Ga_(2)O_(3) provides a viable approach for fabricating ultraviolet photodetectors.Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT:PSS),a p-type organic polymer material,exhibits high transparency in a 250–700 nm wavelength range.Additionally,its remarkable conductivity(>1000 S/cm),high hole mobility(1.7 cm^(2)·V^(–1)·s^(–1)),and excellent chemical stability make it an outstanding candidate for serving as a hole transport layer.Consequently,the combination of p-type PEDOT:PSS with n-typeβ-Ga_(2)O_(3) in a heterojunction configuration provides a promising way for developing PN junction optoelectronic devices.In this study,aβ-Ga_(2)O_(3) microsheet with dimensions:4 mm in length,500μm in width,and 57μm in thickness,is successfully exfoliated from aβ-Ga_(2)O_(3) single crystal substrate by using a mechanical exfoliation technique.Subsequently,a PEDOT:PSS/β-Ga_(2)O_(3) organic/inorganic p-n heterojunction UV photodetector is fabricated by depositing the PEDOT:PSS organic material onto a side of theβ-Ga_(2)O_(3) microsheet.The obtained device exhibits typical rectification characteristics,sensitivity to 254 nm ultraviolet light,and impressive selfpowering performance.Furthermore,the heterojunction photodetector demonstrates exceptional photosensitive properties,achieving a responsivity of 7.13 A/W and an external quantum efficiency of 3484%under 254 nm UV light illumination(16μW/cm^(2))at 0 V.Additionally,the device exhibits a rapid photoresponse time of 0.25 s/0.20 s and maintains good stability and repeatability over time.Notably,after a three-month duration,the photodetection performance for 254 nm UV light detection remained unchanged,without

关 键 词：β-Ga_(2)O_(3) PEDOT:PSS 异质结 紫外光电探测器 

分 类 号：TN23[电子电信—物理电子学]