中低温退火对MoS_(2)纳米薄膜形貌、结构及电性能的影响  

Effect of medium-low temperature annealing on morphology,structure and electrical properties of MoS_(2) nano films

作　　者：刘春泉 熊芬 马佳仪 周锦添 梁泽巽 黄建平 Liu Chunquan;Xiong Fen;Ma Jiayi;Zhou Jintian;Liang Zexun;Huang Jianping(School of Materials Science and Engineering,Hunan Institute of Technology,Hengyang Hunan 421002,China;School of Computer Science and Engineering,Hunan Institute of Technology,Hengyang Hunan 421002,China)

机构地区：[1]湖南工学院材料科学与工程学院,湖南衡阳421002 [2]湖南工学院计算机科学与工程学院,湖南衡阳421002

出　　处：《金属热处理》2024年第7期186-194,共9页Heat Treatment of Metals

基　　金：湖南省科技人才托举工程项目“小荷”科技人才专项(2023TJ-X10);湖南省自然科学基金(2023JJ50108);湖南省创新型省份建设专项科普专题项目(2023ZK4316);湖南省教育厅科学研究项目(20A137,22C0629);湖南省应用特色学科材料科学与工程学科(湘教通[2022]351);衡阳市“小荷”科技人才项目(衡市科协字[2022]68);湖南工学院自科培育项目(2022HY007);湖南省大学生创新创业训练计划项目(S202411528133,S202311528111,S202311528096X)。

摘　　要：采用射频(RF)磁控溅射室温沉积制备了不同厚度的MoS_(2)薄膜,然后在95%Ar+5%H_(2)混合气氛中进行不同退火处理,采用原子力显微镜(AFM)、拉曼光谱、四探针和霍尔测试仪系统地研究了不同退火条件对MoS_(2)薄膜结构、表面形貌和电学性能的影响。结果表明:在硅基片生长的MoS_(2)薄膜均匀连续,退火能有效去除MoS_(2)中的杂质氧进而改善其结晶性、稳定性和结构完整性。溅射沉积40 min(厚度约为300 nm)时MoS_(2)薄膜的综合性能较好,经500℃退火60 min时,MoS_(2)薄膜的结晶性和电学性能均较好。MoS_(2) nano films with different thicknesses were prepared by radio frequency(RF)magnetron sputtering via deposition at room temperature,and then annealed by different processes in 95%Ar+5%H_(2) mixed atmosphere.The structure,surface morphology and electrical properties of the MoS_(2) films were studied by means of atomic force microscope(AFM),Raman spectrum,four-probe and Hall tester.The results show that the MoS_(2) films grown on the silicon substrate are uniform and continuous.The annealing process can effectively remove the impurity oxygen in MoS_(2) films and improve its crystallinity,stability and structural integrity.The comprehensive properties of the MoS_(2) films are better when the deposition time is 40 min(the thickness is about 300 nm),while the crystallinity and electrical properties of the films after annealing at 500℃ for 60 min are all better.

关 键 词：MoS_(2)薄膜 中低温退火 结晶性 

分 类 号：TN304[电子电信—物理电子学]