Room-temperature ferroelectricity in van der Waals SnP_(2)S_(6)  

作　　者：Chaowei He Jiantian Zhang Li Gong Peng Yu 

机构地区：[1]State Key Laboratory of Optoelectronic Materials and Technologies Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices Nanotechnology Research Center,School of Materials Science and Engineering,Sun Yat-sen University,Guangzhou 510275,China [2]Instrumental Analysis and Research Center,Sun Yat-sen University,Guangzhou 510275,China

出　　处：《Frontiers of physics》2024年第4期113-123,共11页物理学前沿（英文版）

基　　金：This work was supported by the National Key Research and Development Program of China(Nos.2021YFE0194200 and 2021YFA1200903);the National Natural Science Foundation of China(No.22175203);the Natural Science Foundation of Guangdong Province(Nos.2022B1515020065 and 2020A1515110821);the Guangzhou Science and Technology Project(No.202102020126);This work was also supported by the Plan Fostering Project of State Key Laboratory of Optoelectronic Materials and Technologies,of Sun Yatsen University(No.OEMT-2021-PZ-02).

摘　　要：Two-dimensional(2D)ferroelectric materials,which possess electrically switchable spontaneous polarization and can be easily integrated with semiconductor technologies,is of utmost importance in the advancement of high-integration low-power nanoelectronics.Despite the experimental discovery of certain 2D ferroelectric materials such as CuInP2S6 and In2Se3,achieving stable ferroelectricity at room temperature in these materials continues to present a significant challenge.Herein,stable ferroelectric order at room temperature in the 2D limit is demonstrated in van der Waals SnP_(2)S_(6) atom layers,which can be fabricated via mechanical exfoliation of bulk SnP_(2)S_(6) crystals.Switchable polarization is observed in thin SnP_(2)S_(6) of~7 nm.Importantly,a van der Waals ferroelectric field-effect transistor(Fe-FET)with ferroelectric SnP_(2)S_(6) as top-gate insulator and ptype WTe0.6Se1.4 as the channel was designed and fabricated successfully,which exhibits a clear clockwise hysteresis loop in transfer characteristics,demonstrating ferroelectric properties of SnP_(2)S_(6) atomic layers.In addition,a multilayer graphene/SnP_(2)S_(6)/multilayer graphene van der Waals vertical heterostructure phototransistor was also fabricated successfully,exhibiting improved optoelectronic performances with a responsivity(R)of 2.9 A/W and a detectivity(D)of 1.4×10^(12) Jones.Our results show that SnP_(2)S_(6) is a promising 2D ferroelectric material for ferroelectric-integrated low-power 2D devices.

关 键 词：two-dimensional ferroelectric materials ferroelectric fieldeffect transistors PHOTODETECTORS 

分 类 号：TN30[电子电信—物理电子学]