Facile Semiconductor p-n Homojunction Nanowires with Strategic p-Type Doping Engineering Combined with Surface Reconstruction for Biosensing Applications  

作　　者：Liuan Li Shi Fang Wei Chen Yueyue Li Mohammad Fazel Vafadar Danhao Wang Yang Kang Xin Liu Yuanmin Luo Kun Liang Yiping Dang Lei Zhao Songrui Zhao Zongzhi Yin Haiding Sun 

机构地区：[1]iGaN Laboratory,School of Microelectronics,University of Science and Technology of China,Hefei 230026,People's Republic of China [2]Department of Obstetrics and Gynecology,The First Affiliated Hospital of Anhui Medical University,No 218 Jixi Road,Hefei 230022,People's Republic of China [3]Department of Electrical and Computer Engineering,McGill University,3480 University Street,Montreal,QC H3A 0E9,Canada [4]Union Hospital,Tongji Medical College,Huazhong University of Science and Technology,No 1277 Jiefang Ave.,Wuhan 430022,People's Republic of China

出　　处：《Nano-Micro Letters》2024年第10期15-30,共16页纳微快报（英文版）

基　　金：funded by the National Natural Science Foundation of China(Grant Nos.62322410,52272168,52161145404,81974530,and 82271721);the Fundamental Research Funds for the Central Universities(Grant No.WK3500000009);the International Projects of the Chinese Academy of Science(CAS)under Grant No.211134KYSB20210011;Hubei Provincial Science and Technology Innovation Talents and Services Special Program(Grant No.2022EHB039)。

摘　　要：Photosensors with versatile functionalities have emerged as a cornerstone for breakthroughs in the future optoelectronic systems across a wide range of applications.In particular,emerging photoelectrochemical(PEC)-type devices have recently attracted extensive interest in liquid-based biosensing applications due to their natural electrolyte-assisted operating characteristics.Herein,a PEC-type photosensor was carefully designed and constructed by employing gallium nitride(GaN)p-n homojunction semiconductor nanowires on silicon,with the p-GaN segment strategically doped and then decorated with cobalt-nickel oxide(CoNiO_(x)).Essentially,the p-n homojunction configuration with facile p-doping engineering improves carrier separation efficiency and facilitates carrier transfer to the nanowire surface,while CoNiO_(x)decoration further boosts PEC reaction activity and carrier dynamics at the nanowire/electrolyte interface.Consequently,the constructed photosensor achieves a high responsivity of 247.8 mA W^(-1)while simultaneously exhibiting excellent operating stability.Strikingly,based on the remarkable stability and high responsivity of the device,a glucose sensing system was established with a demonstration of glucose level determination in real human serum.This work offers a feasible and universal approach in the pursuit of high-performance bio-related sensing applications via a rational design of PEC devices in the form of nanostructured architecture with strategic doping engineering.

关 键 词：p-n GaN nanowires Strategic p-doping Surface decoration Photoelectrochemical sensor Glucose sensing 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TP212.3[自动化与计算机技术—检测技术与自动化装置]