Constructing Built-In Electric Fields with Semiconductor Junctions and Schottky Junctions Based on Mo-MXene/Mo-Metal Sulfides for Electromagnetic Response  

作　　者：Xiaojun Zeng Xiao Jiang Ya Ning Yanfeng Gao Renchao Che 

机构地区：[1]School of Materials Science and Engineering,Jingdezhen Ceramic University,Jingdezhen 333403,People's Republic of China [2]School of Materials Science and Engineering,Shanghai University,Shanghai 200444,People's Republic of China [3]Laboratory of Advanced Materials,Shanghai Key Lab of Molecular Catalysis and Innovative Materials,Academy for Engineering and Technology,Fudan University,Shanghai 200438,People's Republic of China [4]Zhejiang Laboratory,Hangzhou 311100,People's Republic of China

出　　处：《Nano-Micro Letters》2024年第10期453-473,共21页纳微快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.22269010,52231007,12327804,T2321003,22088101);the Jiangxi Provincial Natural Science Foundation(No.20224BAB214021);the Major Research Program of Jingdezhen Ceramic Industry(No.2023ZDGG002);the Ministry of Science and Technology of China(973 Project No.2021YFA1200600).

摘　　要：The exploration of novel multivariate heterostructures has emerged as a pivotal strategy for developing high-performance electromagnetic wave(EMW)absorption materials.However,the loss mechanism in traditional heterostructures is relatively simple,guided by empirical observations,and is not monotonous.In this work,we presented a novel semiconductor-semiconductor-metal heterostructure sys-tem,Mo-MXene/Mo-metal sulfides(metal=Sn,Fe,Mn,Co,Ni,Zn,and Cu),including semiconductor junctions and Mott-Schottky junctions.By skillfully combining these distinct functional components(Mo-MXene,MoS_(2),metal sulfides),we can engineer a multiple heterogeneous interface with superior absorption capabilities,broad effective absorption bandwidths,and ultrathin matching thickness.The successful establishment of semiconductor-semiconductor-metal heterostructures gives rise to a built-in electric field that intensifies electron transfer,as confirmed by density functional theory,which collaborates with multiple dielectric polarization mechanisms to substantially amplify EMW absorption.We detailed a successful synthesis of a series of Mo-MXene/Mo-metal sulfides featuring both semiconductor-semiconductor and semiconductor-metal interfaces.The achievements were most pronounced in Mo-MXene/Mo-Sn sulfide,which achieved remarkable reflection loss values of-70.6 dB at a matching thickness of only 1.885 mm.Radar cross-section calculations indicate that these MXene/Mo-metal sulfides have tremendous potential in practical military stealth technology.This work marks a departure from conventional component design limitations and presents a novel pathway for the creation of advanced MXene-based composites with potent EMW absorption capabilities.

关 键 词：Semiconductor-semiconductor-metal heterostructure Semiconductor junctions Mott-Schottky junctions Built-in electric field Electromagnetic wave absorption 

分 类 号：TB34[一般工业技术—材料科学与工程]