磁控溅射法制备掺镁氧化锌薄膜的微观结构及其物理性质  

Microstructure and physical properties of MgZnO thin films prepared by magnetron sputtering

作　　者：顾锦华[1] 万鑫 冯朝德 龙浩[2,3] 钟志有[2,3] GU Jinhua;WAN Xin;FENG Chaode;LONG Hao;ZHONG Zhiyou(Experimental Teaching and Engineering Training Center,South-Central Minzu University,Wuhan 430074,China;College of Electronics and Information Engineering,South-Central Minzu University,Wuhan 430074,China;Hubei Key Laboratory of Intelligent Wireless Communications,South-Central Minzu University,Wuhan 430074,China)

机构地区：[1]中南民族大学实验教学与工程训练中心,武汉430074 [2]中南民族大学电子信息工程学院,武汉430074 [3]中南民族大学智能无线通信湖北省重点实验室,武汉430074

出　　处：《中南民族大学学报（自然科学版）》2024年第5期709-717,共9页Journal of South-Central University for Nationalities：Natural Science Edition

基　　金：国家自然科学基金资助项目(12075322)。

摘　　要：采用磁控溅射工艺制备了纯氧化锌(ZnO)和不同掺杂量的掺镁氧化锌(MgZnO)薄膜,研究了薄膜样品电学、光学、气敏性能和微观结构与掺杂量之间的依赖关系,以及温度和气体浓度对薄膜气敏性能的影响,并对掺杂量为10%(质量分数)的薄膜样品的室温气敏特性进行细致分析.结果显示:所有制备的薄膜样品均为c轴择优取向生长的六角纤锌矿晶体结构,掺杂量为10%的薄膜样品具有最好的晶体质量、微观结构、光学性能,气体响应性优于其他薄膜,对氨的响应性优于其他目标气体.在室温条件下,掺杂量为10%的薄膜样品对50cm^(3)·m^(-3)氨的响应为44.62%,180天后其响应仅轻微下降为42.02%.Thin films of pure ZnO and Mg-doped ZnO(MgZnO)with different Mg concentrations were prepared by magnetron sputtering.The dependence of the electrical,optical and gas sensing properties and microstructure of the thin films upon Mg doping amount was investigated.The effects of temperature and the concentration of gases on the gas sensing properties of the thin films were studied,and the room temperature gas sensing characteristics of the MgZnO thin film with 10%Mg doping amount(mass fraction)were carefully investigated.The results showed that all the fabricated thin films had hexagonal wurtzite-type crystal structure with highly c-axis preferred orientation along the(002)plane.The MgZnO thin film with 10%Mg doping demonstrated the best crystal quality,microstructure,and optical properties.Meanwhile,it was observed that the MgZnO thin film with 10%Mg showed better gas response than other thin films,and higher response towards ammonia compared to other target gases.The gas response of the 10% MgZnO thin film for 50 cm^(3)·m^(-3) ammonia was 44.62%,and only slightly decreased to 42.02% after 180 days at room temperature.

关 键 词：磁控溅射 掺杂氧化锌 微观结构 气敏性能 

分 类 号：TM914[电气工程—电力电子与电力传动]