InGaN基蓝光激光器p型覆盖层和波导层优化  

Optimization of p-cladding layer and waveguide layer of InGaN-based blue laser diodes

作　　者：马雯 翟智超 李书平 MA Wen;ZHAI Zhichao;LI Shuping(College of Physics and Technology,Xiamen University,Xiamen 361005,China)

机构地区：[1]厦门大学物理科学与技术学院,福建厦门361005

出　　处：《厦门大学学报（自然科学版）》2024年第4期595-602,共8页Journal of Xiamen University：Natural Science

基　　金：国家重点研发计划(2016YFB0400801,2016YFB0400800)。

摘　　要：[目的]为了进一步提升蓝光激光器的性能,基于实验样品结构,研究了p型覆盖层和波导层对InGaN基边发射蓝光激光器性能的综合影响.[方法]将p型覆盖层优化为多层Al组分渐变的结构,以降低p型覆盖层与电子阻挡层的Al组分差值;优化波导层的In组分浓度,以提高波导层的光限制能力.利用PICS3D软件模拟计算其光输出功率、能带结构、光场分布、载流子电流密度分布等特性.[结果]随着p型覆盖层层数的增加,以及p型覆盖层与电子阻挡层之间Al组分差值的减小,光输出功率和斜率效率不断提高;随着上波导层In组分的增加,光输出功率提升明显.同时优化两者得到的最终优化结构,光输出功率可达到0.421 W,相较标准结构提升了65.75%.[结论]降低p型覆盖层与电子阻挡层之间的Al组分差值,可以有效降低两者之间的晶格失配和势垒差,进而提高有源区的空穴注入;增加p型覆盖层的层数可降低晶格失配,进而降低载流子的传输损耗.增加波导层的In组分浓度可以提高有效提高光限制因子,尤其是上波导的In组分增加对提高光限制因子非常明显.[Objective]For the purpose of improving the performance of InGaN lasers,comprehensive effects of p-cladding layer and waveguide layer on the performance of InGaN-based blue lasers are studied.Results can be used to improve the performance of InGaN-based blue lasers,which can be critically applied in areas such as laser displays,high-density optical data storage and laser processing.The motivation of our research lies in enhancing the carrier confinement of GaN-based laser diodes.Because the hole mobility is smaller than the electron mobility,injection amounts of electrons and holes in multiple quantum wells differ.This difference leads to the leakage of electrons into the waveguide layer.In addition,due to the structural asymmetry ofⅢ-Ⅴnitrides,lasers exhibit strong polarization effects,resulting in band bending and weakening the constraint of quantum wells on carriers.Consequently,numerous optimization ideas have been proposed to solve this problem,but most of them focus on multiple quantum wells and barriers.These results show that p-cladding and waveguide layer also play an important role in the performance of InGaN-based blue laser diodes.[Methods]Based on the experimental sample structure,the InGaN-based blue laser with the same structure is constructed by PICS3D simulation software.The optical output power of the simulated standard structure is compared with experimental results,thus demonstrating the reliability of the subsequent data in this article.A series of InGaN-based blue lasers are constructed,and the optical output power,band structure,optical field distribution and carrier current density distribution of different p-cladding and waveguide structures are compared in order to optimize the photoelectric performance of laser.Also,the p-cladding layer is optimized into a multi-layer Al component gradient structure to reduce the Al component difference at the interface between the p-cladding layer and the electron barrier layer,and the optimal structure under this optimization mode is obtained.On t

关 键 词：蓝光激光器 InGaN基 p型覆盖层 线性渐变 波导层 光限制因子 

分 类 号：TN248[电子电信—物理电子学]