基于磁控溅射法生长hBN薄膜的MSM型真空紫外探测器(特邀)  

Vacuum Ultraviolet Photodetectors with MSM Structure Based on Hexagonal Boron Nitride Films via Magnetron Sputtering(Invited)

作　　者：房万年 李强[1] 张启凡 陈冉升 李家兴 刘康康 云峰[1] FANG Wannian;LI Qiang;ZHANG Qifan;CHEN Ransheng;LI Jiaxing;LIU Kangkang;YUN Feng(School of Electronic Science and Engineering,Xi′an Jiaotong University,Xi′an 710049 China)

机构地区：[1]西安交通大学电子科学与工程学院,西安710049

出　　处：《光子学报》2024年第7期21-30,共10页Acta Photonica Sinica

基　　金：国家重点研究发展计划(No.2021YFB3602000),中央高校基本科研业务费(Nos.xpt012022019,xyz012022088,xzd012022065)。

摘　　要：针对目前大面积高质量六方氮化硼(hBN)薄膜的制备与转移存在均匀性、晶粒控制、无损转移等问题,采用射频磁控溅射技术成功在2英寸硅和蓝宝石介电衬底上沉积了hBN薄膜,拉曼光谱、X射线光电子能谱表征证实了薄膜具有明显的hBN特征。制备了hBN基金属-半导体-金属型光电探测器,并探究了电极材料、薄膜厚度以及叉指电极宽度和间距对探测性能的影响。优选出的Ni电极探测器具有极低的暗电流(<3 pA@100 V),对185 nm波长光具有明显光响应,响应度和比探测率分别为2.769 mA/W和2.969×10^(9)Jones。High performance Vacuum Ultraviolet(VUV)photodetectors are of great significance for space science,radiation monitoring,electronics industry,and basic science.The ultra-wide bandgap semiconductor material of hexagonal Boron Nitride(hBN)has high band edge absorption coefficient,thermal conductivity,and excellent thermal and chemical stability,making it very suitable for application in the field of VUV detection.At present,there are still some challenges in the preparation and transfer of large-scale high-quality hBN films.In this work,two-inch wafer-level hBN films were successfully deposited on silicon and sapphire substrates using radio frequency magnetron sputtering technique.Characterization of the surface morphology by scanning electron microscope and atomic force microscope confirmed the production of uniformly continuous and dense films with an root meam square value of 4.04 nm(the film thickness was 154 nm);Raman peaks were located in the 1366 cm^(−1),and the full width at half maxima was about 33 cm^(−1),which confirmed that the hBN films had hexagonal phase,and the quality of the crystalline was relatively high;X-ray photoelectron spectroscopy verified B-N bonding with a B/N ratio of 1.05∶1,indicating that the films had a small amount of nitrogen vacancies;the UV-vis absorption spectrum indicated that the films only had strong absorption of deep ultraviolet light below 220 nm,with the intrinsic absorption edge located at 212.5 nm,the absorption coefficient was as high as 1.52×10^(5)cm^(−1),and the optical bandgap of hBN was about 5.95 eV.Furthermore,the MSM-type photodetectors based on hBN films were fabricated,and the effects of electrode material,film thickness,and interdigital electrode width and spacing on performance were investigated.According to the Schottky contact model,the higher the work function of the metal,the Schottky barrier height formed with the hBN material would be higher,and the junction current density would be lower.During the preparation of electrodes,the actual barrier h

关 键 词：真空紫外探测 六方氮化硼 磁控溅射技术 金属-半导体-金属型光电探测器 

分 类 号：TN15[电子电信—物理电子学] TN364