硅微透镜阵列与红外焦平面阵列的集成器件的制备与性能(特邀)  

Preparation and Performance of Integration Device between Si Microlens Array and Infrared Focal Plane Array(Invited)

作　　者：侯治锦 王旭东[2] 陈艳[1] 王建禄 褚君浩[1] HOU Zhijin;WANG Xudong;CHEN Yan;WANG Jianlu;CHU Junhao(State Key Laboratory of Photovoltaic Science and Technology,Shanghai Frontiers Science Research Base ofIntelligent Optoelectronics and Perception,Institute of Optoelectronics,Fudan University,Shanghai 200433,China;State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)

机构地区：[1]复旦大学光电研究院,光伏科学与技术全国重点实验室,上海市智能光电与感知前沿科学研究基地,上海200433 [2]中国科学院上海技术物理研究所,红外物理国家重点实验室,上海200083

出　　处：《光子学报》2024年第7期42-48,共7页Acta Photonica Sinica

基　　金：National Key Research and Development Program(No.2021YFA1200700);National Natural Science Foundation of China(No.62105100)。

摘　　要：为了提高红外焦平面阵列性能,分别制备了硅衍射微透镜阵列和InSb红外焦平面阵列并将两者集成在一起。采用光学系统和焦平面测试系统进行了测试。结果显示双面镀制有增透膜的硅衍射微透镜阵列的衍射效率为83.6%;电压响应图显示器件没有裂纹;集成器件的工作波段为3.7~4.8μm,此时平均黑体响应率和探测率分别为4.85×10^(7)V/W和7.12×10^(9)cm·Hz^(1/2)·W^(1)。结果表明硅微透镜阵列不仅可以提高焦平面阵列占空因子,而且可以通过优化焦平面应力匹配来解决芯片裂纹问题,集成器件性能优于现有焦平面性能。Integration device between silicon(Si)microlens array and Infrared Focal Plane Array(IRFPA)has been a hot research topic domestically and internationally.IRFPA nowadays serves military and commercial equipment fields,such as defense weapons,infrared remote sensing and meteorological environment because of its high sensitivity and strong anti-interference.Si microlens array can be integrated with IRFPA to solve the problems caused by the low filling factor and chip cracking of IRFPA,thereby improving the performance of IRFPA.In this paper,in order to improve the performance of IRFPA,Si diffractive microlens array is designed.The Si diffractive microlens array and InSb IRFPA are prepared and integrated together.And the performance of integration device is given and discussed.Firstly,design parameters and preparation method of Si microlens array for IRFPA are given in detail.The Si diffractive microlens array is comprised of eight zones within one pixel.The radius of each zone is 6.2μm,8.8μm,10.8μm,12.45μm,13.95μm,15.3μm,16.5μm,17.7μm.The minimum zone width is 1.2μm.Each etch depth is different.The etching depths are 0.868μm,0.434μm,0.217μm.Plasma etching is used in Si diffractive microlens array preparation.The Si diffractive microlens array is prepared by three photolithographic and etching processing steps.The SI500E type equipment is used as reactive ion etching.The etching conditions are the gas flow of CHF3∶O2 of 24 mL∶6 mL,the ICP source power of 400 W,the Radio Frequency(RF)source power of 150 W,and the pressure of reaction room of 0.5 Pa.Secondly,the InSb IRFPA is made using the prepared InSb array and Si Readout Circuit(ROIC).An n-type InSb substrate is used and a P-type layer is obtained through the diffusion Cd.A surface with mesa is obtained by photolithography and etching.After passivation of the mesa,a chrome gold layer is evaporated and then electrodes are obtained through photolithography and corrosion processes.After the chip is prepared,the developed InSb array and the readout circ

关 键 词：集成 红外焦平面阵列 硅微透镜阵列 占空因子 芯片裂纹 

分 类 号：TN215[电子电信—物理电子学]