Al掺杂ZnO纳米线阵列紫外光探测器特性  

Characteristics of Al-doped ZnO Nanowire Arrays Ultraviolet Photodetectors

作　　者：袁兆林 许庆鹏 谢志文 何剑锋[1,2,3] 游胜玉[1,2,3] 汪雪元 YUAN Zhaolin;XU Qingpeng;XIE Zhiwen;HE Jianfeng;YOU Shengyu;WANG Xueyuan(Jiangxi Key Laboratory of Cybersecurity Intelligent Perception,East China University of Technology,Nanchang 330013,China;School of Software,East China University of Technology,Nanchang 330013,China;School of Information Engineering,East China University of Technology,Nanchang 330013,China)

机构地区：[1]东华理工大学江西省网络空间安全智能感知重点实验室,南昌330013 [2]东华理工大学软件学院,南昌330013 [3]东华理工大学信息工程学院,南昌330013

出　　处：《光子学报》2024年第7期116-124,共9页Acta Photonica Sinica

基　　金：国家自然科学基金(No.11865002);江西省自然科学基金(No.20212BAB201003);江西省研究生创新基金项目(No.YC2023-S591);东华理工大学博士科研启动基金(No.DHBK2019214);江西省网络空间安全智能感知重点实验室开放基金(No.JKLCIP202208)。

摘　　要：采用简便水热法,在具有叉指图案的氟掺杂氧化锡导电玻璃基底上,生长出几种Al掺杂浓度ZnO纳米线阵列,Al/Zn原子比分别为0%(未掺杂)、0.5%、1%、2%和4%。实验结果显示:所有样品均为六方纤锌矿结构,Al掺杂ZnO纳米线沿近似垂直基底表面方向生长,形成良好取向阵列。并且用这些Al掺杂ZnO纳米线阵列作为光敏层,制备了五种紫外光探测器,系统研究了器件性能。经分析,所有器件对365 nm紫外光表现出良好响应。1%Al掺杂ZnO纳米线阵列紫外光探测器具有最佳性能,在365 nm波长处,该探测器响应度、比探测率、灵敏度、外量子效率、响应时间和衰减时间分别为6180 mA/W、1.51×10^(12)Jones、83.2、6090%、4.12 s和14.45 s。该研究证实在ZnO纳米线阵列中进行适量Al掺杂,可有效提高其紫外光探测器性能。ZnO,an II-VI semiconductor,has a direct wide bandgap of 3.37 eV and a large exciton binding energy of 60 meV.Also ZnO has many advantages,such as low cost,nontoxicity,rich raw materials,good chemical stability and excellent photoelectric properties.Up till now,ZnO has been widely investigated for various potential applications,such as solar cells,catalyses,piezoelectric devices,gas sensors,light-emitting diodes and Ultraviolet(UV)photodetectors.UV photodetectors have received great attention because they play key roles in many important fields,such as military,civilian,space communication,industrial automation,wastewater treatment and environmental monitoring.In particular,UV photodetectors based on some wide bandgap semiconductors,such as gallium nitride,titanium dioxide,diamond,silicon carbide,gallium oxide and ZnO,have attract increasing interest due to their excellent performances.Among these wide bandgap semiconductors,ZnO is considered as one of the most ideal candidates for UV photodetectors.In order to achieve high-performance ZnO UV photodetectors,various nanostructured ZnO,such as nanoparticles,nanorods,nanowires and nanoflowers,were used as photosensitive layers to fabricate UV photodetectors.Well-aligned ZnO nanowire arrays,a unique structure,have high specific surface area,good photoelectronic performance as well as a more direct and effective conduction path for electrons,high-performance UV photodetectors based on well-aligned ZnO nanowire arrays are easy to realize.Unfortunately,the performances of the reported well-aligned ZnO nanowire arrays UV photodetectors have still been poor so far.Normally,the performance of photoconductive well-aligned ZnO nanowire arrays UV photodetector mainly depends on electric property of ZnO nanowire arrays,the metallic elements doping,such as Ga,In,Mg and Al,is one of the most well-known means for improving electric property of ZnO nanowire arrays.Among these metallic elements,the radius of Al3+ions is smaller than that of Zn2+ions,Al are easily doped into ZnO matr

关 键 词：紫外光探测器 氧化锌 AL掺杂 掺杂浓度 水热法 光响应 

分 类 号：TN361[电子电信—物理电子学]