High precision current mirror circuit based on two-dimens ional material transistors  

作　　者：Shiping GAO Chen PAN Pincheng SU Xing-Jian YANGDONG Wentao YU Zhoujie ZENG Yu SHEN Jingwen SHI Yanwei CUI Pengfei WANG Yuekun YANG Cong WANG Bing CHENG Shi-Jun LIANG Feng MIAO 

机构地区：[1]Institute of Interdisciplinary Physical Sciences,School of Physics,Nanjing University of Science and Technology,Nanjing210094,China [2]Institute of Brain-Inspired Intelligence,National Laboratory of Solid State Microstructures,School of Physics,Collaborative Innovation Center of Advanced Microstructures,Nanjing 210093,China

出　　处：《Science China(Information Sciences)》2024年第8期349-350,共2页中国科学（信息科学）（英文版）

基　　金：supported in part by National Natural Science Foundation of China(Grant Nos.62122036,62204119,62034004,62375131,62305155,62304104);Natural Science Foundation of Jiangsu Province(Grant Nos.BK20210337,BK20220947);Funding of NJUST(Grant No.TSXK2022D008).

摘　　要：The emerging two-dimensional field-effect transistor(2DFET)is considered an important candidate device for driving future integrated circuit technology toward higher performance,lower power consumption,and more functionalities[1,2].Among the integrated circuits,analog circuits play a crucial role as they are responsible for sampling,amplifying,and transmitting signals.However,there is a significant challenge in realizing high-performance analog circuits using 2D-FETs,which limits the further development of highperformance integrated circuits based on 2D materials[3,4].The primary challenge lies in the fact that 2D-FETs have not yet demonstrated ideal output current saturation characteristics and failed to meet the application requirements of analog circuits.

关 键 词：MIRROR driving SATURATION 

分 类 号：TN386[电子电信—物理电子学]