Pressure-triggered stacking dependence of interlayer coupling in bilayer WS_(2)  

作　　者：Zejuan Zhang Chenyin Jiao Shenghai Pei Xilong Zhou Jiaze Qin Wanli Zhang Yu Zhou Zenghui Wang Juan Xia 

机构地区：[1]School of Integrated Sciences and Engineering(Exemplary School of Microelectronics),University of Electronic Science and Technology of China,Chengdu 610054,China [2]Institute of Fundamental and Frontier Sciences,University of Electronic Science and Technology of China,Chengdu 610054,China [3]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,China [4]School of Physics and Electronics,Hunan Key Laboratory of Nanophotonics and Devices,Central South University,Changsha 410083,China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2024年第8期177-186,共10页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.T2325007,62250073,U21A20459,62004026,61774029,62104029,12104086,62150052,U23A20570,and 51902346);the Sichuan Science and Technology Program(Grant Nos.2021JDTD0028,2023NSFSC1334,24NSFSC5852,and 24NSFSC5853);the Science and Technology Innovation Program of Hunan Province(Grant No.2021RC3021)。

摘　　要：Tungsten disulfide(WS_(2))has been reported to show negligible stacking dependence under ambient conditions,impeding its further explorations on physical properties and potential applications.Here,we realize efficient modulation of interlayer coupling in bilayer WS_(2)with 3R and 2H stackings by high pressure,and find that the pressure-triggered interlayer coupling and pressure-induced resonant-to-nonresonant transition exhibit prominent stacking dependence,which are experimentally observed for the first time in WS2.Our work may unleash the stacking degree of freedom in designing WS_(2)devices with tailored properties correlated to interlayer coupling.

关 键 词：tungsten disulfide pressure engineering stacking order interlayer coupling 

分 类 号：O469[理学—凝聚态物理]