高效蓝光钙钛矿发光二极管的埋底界面修饰和光耦合策略  

Buried interface modification and light outcoupling strategy for efficient blue perovskite light-emitting diodes

作　　者：王舒欣 余知秋 秦佳俊 陈国毅 刘永杰 樊帅伟 马超 姚方 崔鸿森 周顺 董开连 林乾乾 陶晨 高峰 柯维俊 方国家 Shuxin Wang;Zhiqiu Yu;Jiajun Qin;Guoyi Chen;Yongjie Liu;Shuaiwei Fan;Chao Ma;Fang Yao;Hongsen Cui;Shun Zhou;Kailian Dong;Qianqian Lin;Chen Tao;Feng Gao;Weijun Ke;Guojia Fang(Key Lab of Artificial Micro-and Nano-Structures of Ministry of Education of China,School of Physics and Technology,Wuhan University,Wuhan 430072,China;Department of Physics,Chemistry and Biology(IFM),Linköping University,Linköping SE-58183,Sweden;Department of Physics,China Three Gorges University,Yichang 443002,China;Key Laboratory of Flexible Electronics(KLOFE),Institute of Advanced Materials(IAM),School of Flexible Electronics(Future Technologies),Nanjing Tech University,Nanjing 211816,China;School of Electronic and Electrical Engineering,Wuhan Textile University,Wuhan 430200,China)

机构地区：[1]Key Lab of Artificial Micro-and Nano-Structures of Ministry of Education of China,School of Physics and Technology,Wuhan University,Wuhan 430072,China [2]Department of Physics,Chemistry and Biology(IFM),Linköping University,Linköping SE-58183,Sweden [3]Department of Physics,China Three Gorges University,Yichang 443002,China [4]Key Laboratory of Flexible Electronics(KLOFE),Institute of Advanced Materials(IAM),School of Flexible Electronics(Future Technologies),Nanjing Tech University,Nanjing 211816,China [5]School of Electronic and Electrical Engineering,Wuhan Textile University,Wuhan 430200,China

出　　处：《Science Bulletin》2024年第14期2231-2240,共10页科学通报（英文版）

基　　金：supported by the National Natural Science Foundation of China(12134010,62074117,and 12174290);the support of the Key R&D program from Hubei Province(2023BAB102);ERC Consolidator Grant(LEAP,101045098);the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Link?ping University(Faculty Grant SFO–Mat–LiU No.2009–00971)。

摘　　要：Perovskite light-emitting diodes(PeLEDs)exhibit remarkable potential in the field of displays and solidstate lighting.However,blue PeLEDs,a key element for practical applications,still lag behind their green and red counterparts,due to a combination of strong nonradiative recombination losses and unoptimized device structures.In this report,we propose a buried interface modification strategy to address these challenges by focusing on the bottom-hole transport layer(HTL)of the PeLEDs.On the one hand,a multifunctional molecule,aminoacetic acid hydrochloride(AACl),is introduced to modify the HTL/perovskite interface to regulate the perovskite crystallization.Experimental investigations and theoretical calculations demonstrate that AACl can effectively reduce the nonradiative recombination losses in bulk perovskites by suppressing the growth of low-n perovskite phases and also the losses at the bottom interface by passivating interfacial defects.On the other hand,a self-assembly nanomesh structure is ingeniously developed within the HTLs.This nanomesh structure is meticulously crafted through the blending of poly-(9,9-dioctyl-fluorene-co-N-(4-butyl phenyl)diphenylamine)and poly(n-vinyl carbazole),significantly enhancing the light outcoupling efficiency in PeLEDs.As a result,our blue PeLEDs achieve remarkable external quantum efficiencies,20.4%at 487 nm and 12.5%at 470 nm,which are among the highest reported values.Our results offer valuable insights and effective methods for achieving high-performance blue PeLEDs.

关 键 词：Buried interface Light outcoupling strategy Perovskite light-emittingdiode Blueemission 

分 类 号：TN312.8[电子电信—物理电子学]