垂直布里奇曼法制备碲化汞晶体技术研究  

Research on Preparation of Mercury Telluride Crystals by Vertical Bridgman Growth

作　　者：段晋胜 张红梅 王宏杰 DUAN Jinsheng;ZHANG Hongmei;WANG Hongjie(The 2^(nd) Research Institute of CETC,Taiyuan 030024,China)

机构地区：[1]中国电子科技集团公司第二研究所,山西太原030024

出　　处：《电子工业专用设备》2024年第4期17-20,共4页Equipment for Electronic Products Manufacturing

摘　　要：介绍了碲化汞单晶材料的性能特点、应用领域、制备技术及面临的挑战。根据材料特性采用布里奇曼法设计和优化设备细节和核心工艺参数,分析了炉体核心材料、热场结构以及杂质去除技术和精确控制生长速度等对碲化汞晶体材料质量的影响,为设备和工艺优化积累了依据。展望了布里奇曼法制备碲化汞单晶的技术创新措施可以提高单晶体的质量和性能,推动相关领域的技术进步和产业升级。This paper introduces the performance characteristics,application fields,preparation techniques,and challenges faced by mercury telluride single crystal materials.Design and optimize equipment details and core process parameters using the Bridgman method based on material characteristics.Analyzed the impact of core materials,thermal field structure,impurity removal technology,and precise control of growth rate on the quality of mercury telluride crystal materials,providing a basis for equipment and process optimization.The technological innovation measures for preparing mercury telluride single crystals using the Bridgman method are expected to improve the quality and performance of single crystals,promote technological progress and industrial upgrading in related fields.

关 键 词：红外探测 半导体光电材料 碲化汞 垂直布里奇曼法 晶体生长 

分 类 号：TN304.05[电子电信—物理电子学]