Two-dimensional perovskite oxide high-κ dielectric for high-performance phototransistors  

作　　者：Zhongfan Liu 

机构地区：[1]Center for Nanochemistry,Beijing Science and Engineering Center for Nanocarbons,Beijing National Laboratory for Molecular Sciences,College of Chemistry and Molecular Engineering,Peking University,Beijing 100871,China [2]Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation,Beijing Graphene Institute,Beijing 100095,China

出　　处：《Science Bulletin》2024年第13期2001-2003,共3页科学通报（英文版）

摘　　要：Field-effect transistors are essential components of modern electronics.Nowadays,the continued scaling of electronic and optoelectronic devices is bringing silicon-based technologies close to their physical limits,causing issues such as short-channel effects[1].Two-dimensional(2D)semiconductors provide an attractive solution for transistors to extend Moore’s law because of their ultrathin thickness and immunity to short-channel effects[2].To fulfill the potential of 2D semiconductors,gate dielectrics need to be simultaneously engineered to build future 2D-material-based transistors.Gate insulators with high dielectric constants(j)exhibit lower equivalent oxide thickness,which can ensure efficient gate control over channels and low gate leakage[3].Therefore,tremendous efforts have been made in searching for novel high-j dielectrics.

关 键 词：DIELECTRIC OXIDE DIMENSIONAL 

分 类 号：TN32[电子电信—物理电子学]