Memristive switching in the surface of a charge-density-wave topological semimetal  

作　　者：Jianwen Ma Xianghao Meng Binhua Zhang Yuxiang Wang Yicheng Mou Wenting Lin Yannan Dai Luqiu Chen Haonan Wang Haoqi Wu Jiaming Gu Jiayu Wang Yuhan Du Chunsen Liu Wu Shi Zhenzhong Yang Bobo Tian Lin Miao Peng Zhou Chun-Gang Duan Changsong Xu Xiang Yuan Cheng Zhang 

机构地区：[1]State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing,Fudan University,Shanghai 200433,China [2]State Key Laboratory of Precision Spectroscopy,East China Normal University,Shanghai 200241,China [3]Key Laboratory of Computational Physical Sciences(Ministry of Education),Institute of Computational Physical Sciences,State Key Laboratory of Surface Physics,Department of Physics,Fudan University,Shanghai 200433,China [4]Shanghai Qi Zhi Institute,Shanghai 200030,China [5]School of Physics,Southeast University,Nanjing 211189,China [6]Key Laboratory of Polar Materials and Devices(Ministry of Education),Department of Electronics,East China Normal University,Shanghai 200241,China [7]Shanghai Center of Brain–inspired Intelligent Materials and Devices,East China Normal University,Shanghai 200241,China [8]State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,China [9]Frontier Institute of Chip and System,Fudan University,Shanghai 200433,China [10]Zhangjiang Fudan International Innovation Center,Fudan University,Shanghai 201210,China [11]School of Physics and Electronic Science,East China Normal University,Shanghai 200241,China

出　　处：《Science Bulletin》2024年第13期2042-2049,共8页科学通报（英文版）

基　　金：supported by the National Key R&D Program of China(2022YFA1405700);the National Natural Science Foundation of China(12174069 and 92365104);Shuguang Program from the Shanghai Education Development Foundation;supported by the National Key R&D Program of China(2023YFA1407500);the National Natural Science Foundation of China(12174104 and 62005079);supported by the National Key R&D Program of China(2022YFA1402901);National Natural Science Foundation of China(12274082);Shanghai Science and Technology Committee(23ZR1406600);Shanghai Pilot Program for Basic Research-FuDan University 21TQ1400100(23TQ017);supported by the China Postdoctoral Science Foundation(2022M720816);supported by the National Key R&D Program of China(2022YFA1402902)。

摘　　要：Owing to the outstanding properties provided by nontrivial band topology,topological phases of matter are considered as a promising platform towards low-dissipation electronics,efficient spin-charge conversion,and topological quantum computation.Achieving ferroelectricity in topological materials enables the non-volatile control of the quantum states,which could greatly facilitate topological electronic research.However,ferroelectricity is generally incompatible with systems featuring metallicity due to the screening effect of free carriers.In this study,we report the observation of memristive switching based on the ferroelectric surface state of a topological semimetal(TaSe_(4))2I.We find that the surface state of(TaSe_(4))2I presents out-of-plane ferroelectric polarization due to surface reconstruction.With the combination of ferroelectric surface and charge-density-wave-gapped bulk states,an electric-switchable barrier height can be achieved in(TaSe_(4))2I-metal contact.By employing a multi-terminal-grounding design,we manage to construct a prototype ferroelectric memristor based on(TaSe_(4))2I with on/off ratio up to 103,endurance over 103 cycles,and good retention characteristics.The origin of the ferroelectric surface state is further investigated by first-principles calculations,which reveal an interplay between ferroelectricity and band topology.The emergence of ferroelectricity in(TaSe_(4))2I not only demonstrates it as a rare but essential case of ferroelectric topological materials,but also opens new routes towards the implementation of topological materials in functional electronic devices.

关 键 词：Topological semimetal Schottky barrier Surface ferroelectricity Memristor 

分 类 号：O18[理学—数学]