Flexible nanoimprint lithography enables high-throughput manufacturing of bioinspired microstructures on warped substrates for efficient III-nitride optoelectronic devices  

作　　者：Siyuan Cui Ke Sun Zhefu Liao Qianxi Zhou Leonard Jin Conglong Jin Jiahui Hu Kuo-Sheng Wen Sheng Liu Shengjun Zhou 

机构地区：[1]Center for Photonics and Semiconductors,School of Power and Mechanical Engineering,Wuhan University,Wuhan 430072,China [2]The Institute of Technological Sciences,Wuhan University,Wuhan 430072,China [3]Department of Mechanical and Mechatronics Engineering,University of Waterloo,Waterloo ON,N2L 3G1,Canada [4]Jiangxi SMTC Semiconductor Co.,Ltd.,Nanchang 330096,China

出　　处：《Science Bulletin》2024年第13期2080-2088,共9页科学通报（英文版）

基　　金：supported by the National Natural Science Foundation of China(52075394);the National Key R&D Program of China(2022YFB3603603 and 2021YFB3600204);the Key Research and Development Program of Hubei Province(2023BAB137);the Knowledge Innovation Program of Wuhan-Basic Research,the National Youth Talent Support Program,and the Fundamental Research Funds for the Central Universities.

摘　　要：III-nitride materials are of great importance in the development of modern optoelectronics,but they have been limited over years by low light utilization rate and high dislocation densities in heteroepitaxial films grown on foreign substrate with limited refractive index contrast and large lattice mismatches.Here,we demonstrate a paradigm of high-throughput manufacturing bioinspired microstructures on warped substrates by flexible nanoimprint lithography for promoting the light extraction capability.We design a flexible nanoimprinting mold of copolymer and a two-step etching process that enable high-efficiency fabrication of nanoimprinted compound-eye-like Al2O3 microstructure(NCAM)and nanoimprinted compound-eye-like SiO_(2)microstructure(NCSM)template,achieving a 6.4-fold increase in throughput and 25%savings in economic costs over stepper projection lithography.Compared to NCAM template,we find that the NCSM template can not only improve the light extraction capability,but also modulate the morphology of AlN nucleation layer and reduce the formation of misoriented GaN grains on the inclined sidewall of microstructures,which suppresses the dislocations generated during coalescence,resulting in 40%reduction in dislocation density.This study provides a low-cost,high-quality,and high-throughput solution for manufacturing microstructures on warped surfaces of III-nitride optoelectronic devices.

关 键 词：Flexible nanoimprint lithography BIOINSPIRED Micro-and nano-manufacturing III-nitride epitaxy Optoelectronic devices 

分 类 号：TN15[电子电信—物理电子学]