掺杂Ba(Zr_(0.15)Ti_(0.85))O_(3)陶瓷的结构与电性能研究  

Study on structure and electrical properties of Ba(Zr_(0.15)Ti_(0.85))O_(3) doped ceramics

作　　者：熊彩莲 孙国斌[2] 李恒[3] 邢峰 XIONG Cailian;SUN Guobin;LI Heng;XING Feng(Zhengzhou Professional Technical Institute of Electronics and Information,Zhengzhou 451450,China;Henan Vocational College of Agriculture,Zhengzhou 451450,China;Zhengzhou University,Zhengzhou 450001,China)

机构地区：[1]郑州电子信息职业技术学院,河南郑州451450 [2]河南农业职业学院,河南郑州451450 [3]郑州大学,河南郑州450001

出　　处：《无机盐工业》2024年第8期60-66,共7页Inorganic Chemicals Industry

基　　金：河南省科技攻关项目(212102210530);中国博士后科学基金资助项目(20200410897)。

摘　　要：采用固相烧结法制备了不同氧化钬掺杂量的Ba(Zr_(0.15)Ti_(0.85))O_(3)(BZT)陶瓷,对比分析了未掺杂和掺杂不同含量氧化钬的BZT陶瓷的物相组成、显微组织、介电性能和铁电性能。结果表明:未掺杂或氧化钬掺杂量较小(质量分数≤2%)的BZT陶瓷主要以单相固溶体形式存在;当氧化钬质量分数增加至3%及以上时,BZT陶瓷中形成新的Ho_(2)Ti_(2)O_(7)相;掺杂氧化钬的BZT陶瓷晶粒尺寸明显小于未掺杂氧化钬的BZT陶瓷,且随着氧化钬掺杂量的增加,BZT陶瓷的平均晶粒尺寸逐渐减小。此外,随着氧化钬掺杂量的增加,BZT陶瓷的ε_(r RT)和tan δ_(RT)先增加后减小,当氧化钬质量分数为2%时可以得到高ε_(r RT)、低tan δ_(RT)的BZT陶瓷。掺杂氧化钬的BZT陶瓷具有弛豫铁电陶瓷特征,氧化钬质量分数为2%~7%的BZT陶瓷的剩余极化强度均低于未掺杂氧化钬的BZT陶瓷,且剩余极化强度随着氧化钬掺杂量的增加逐渐减小;掺杂氧化钬的BZT陶瓷的矫顽电场均小于未掺杂氧化钬的BZT陶瓷,且矫顽电场随着氧化钬掺杂量的增加逐渐减小;BZT陶瓷剩余极化强度和矫顽电场的变化主要与BZT陶瓷内部相变、晶粒尺寸等有关。Ba(Zr_(0.15)Ti_(0.85))O_(3)(BZT)ceramics with different doping amounts of holmium oxide were prepared by solid‐state sintering method,the phase composition,microstructure,dielectric properties,and ferroelectric properties of undoped and holmium oxide doped BZT ceramics were compared and analyzed.The results indicated that BZT ceramics with undoped or low doping amounts of holmium oxide(≤2%)mainly existed in the form of single‐phase solid solutions.When the doping amount of holmium oxide was increased to 3%or more,new Ho2Ti2O_(7) phases were formed in the doped BZT ceramics.The grain size of holmium oxide doped BZT ceramics was significantly smaller than that of undoped BZT ceramics,and as the doping amount of holmium oxide increased,the average grain size of doped BZT ceramics was gradually decreased.As the doping amount of holmium oxide increased,the performance of BZT ceramicsε(rRT)and tan δ_(RT) was increased firstly and then decreased.When the mass fraction of holmium oxide was 2%,BZT ceramics with highε(rRT)and low tanδ_(RT) could be obtained.Doped BZT ceramics exhibited the characteristics of relaxor ferroelectric ceramics,the residual polarization intensity of doped BZT ceramics with 2%~7%holmium oxide doping was lower than that of undoped BZT ceramics,and the residual po‐larization intensity was gradually decreased with the increase of doping amount.The coercive electric field of doped BZT ce‐ramics was smaller than that of undoped BZT ceramics,and the coercive electric field of doped BZT ceramics was gradually decreased with the increase of doping amount.The changes in residual polarization intensity and coercive electric field were mainly related to the internal phase transition and grain size of BZT ceramics.

关 键 词：Ba(Zr_(0.15)Ti_(0.85))O_(3)陶瓷 氧化钬掺杂 结构 弛豫铁电 介电性能 

分 类 号：TQ174.1[化学工程—陶瓷工业]