特高压GIS用磁环型阻尼母线VFTO抑制性能试验研究  

Experimental Study on VFTO Suppression Performance of Magnetic Ring Damping Bus for UHV GIS

作　　者：杨喜龙 穆双录 王浩 刘卫东[3] 李志兵 李心一 顾群 YANG Xilong;MU Shuanglu;WANG Hao;LIU Weidong;LI Zhibing;LI Xinyi;GU Qun(Xi’an Xidian Switch Electric Co.,Ltd.,Xi’an 710077,China;China Electric Power Research Institute Co.,Ltd.,Beijing 100192,China;Tsinghua University,Beijing 100084,China)

机构地区：[1]西安西电开关电气有限公司,西安710077 [2]中国电力科学研究院有限公司,北京100192 [3]清华大学,北京100084

出　　处：《高压电器》2024年第8期77-84,共8页High Voltage Apparatus

摘　　要：GIS中的隔离开关在操作过程中由于断口重复击穿会产生特快速瞬态过电压(very fast transient overvoltage,VFTO)。VFTO幅值高、波前陡,严重威胁电气一次绝缘,并会产生电磁干扰问题。目前,实际工程中除采用带投切电阻的隔离开关抑制VFTO外,还可以采用磁环型阻尼母线对VFTO进行抑制。为了保证GIS的可靠性,磁环型阻尼母线抑制性能的优劣至关重要。为此,亟需研究提出一种在试验室进行磁环抑制效果的评定方法。文中针对磁环型阻尼母线的抑制性能,设计了专门的抑制性能试验回路,该试验回路中主要包含套管、阻尼电阻、放电间隙、磁环型阻尼母线、GIS短母线、VFTO传感器以及VFTO测量系统。该试验回路的额定电压为1100 kV,回路中的套管和母线可承受的额定工频电压为1100 kV,阻尼电阻的阻值为560Ω或1500Ω,放电间隙可以通过电极间距的调整产生不同等级的放电电压值和放电陡波,陡波上升时间可以达到30 ns。应用该试验回路在试验室进行模拟试验的方法检验磁环型阻尼母线的抑制效果,试验结果表明,该试验回路可以完成磁环型阻尼母线抑制效果的检验,可以定量地给出抑制效果的优劣。该方法可以推广到其他电压等级的GIS产品中,有助于推动实现磁环型阻尼母线的工业化设计、制造及检验。Very fast transient overvoltage(VFTO)will be generated during the operation of the disconnector in GIS due to the repeated breakdown across open contacts.The high amplitude and steep wave front of VFTO seriously threaten the electrical primary insulation and cause electromagnetic interference problems.At present,in addition to using the disconnector with switching resistor to suppress VFTO in practical projects,the magnetic ring damping bus can also be used to suppress the VFTO.For assuring reliability of GIS,the suppression performance of the magnetic ring damping bus is very important.Therefore,it is urgent to research and propose a method for evaluating the magnetic ring suppression effect in the laboratory.In this paper,a special suppression performance test circuit is designed for the suppression performance of the magnetic ring damping bus,which mainly includes bushing,damping resistor,discharge gap,magnetic ring damping bus,GIS short busbar,VFTO sensor and VFTO measurement system.The rated voltage of the test circuit is 1100 kV,the rated power frequency voltage that the bushing and busbar in the circuit can withstand is 1100 kV,the resistance value of the damping resistor is 560Ωor 1500Ω,and the discharge gap can be adjusted by the electrode spacing to generate different levels of discharge voltage and discharge steep wave,and the steep wave rise time can reach 30 ns.The test circuit is used to test the suppression effect of the magnetic ring damping busbar in the laboratory.The test results show that the test circuit can complete the test of the suppression effect of the magnetic ring damping busbar,and can quantitatively give the effect of the suppression effect.The method can be promoted to GIS products of other voltage levels,and can help to promote the realization of industrialized design,manufacture and inspection of magnetic ring damping busbar.

关 键 词：特高压 GIS 磁环型阻尼母线 特快速瞬态过电压 抑制性能 模拟试验 

分 类 号：TM564.1[电气工程—电器] TM595