Investigation of an electrode-driven hydrogen plasma method for in situ cleaning of tin-based contamination  

作　　者：彭怡超 叶宗标 王思蜀 蒲国 刘显洋 苑聪聪 廖加术 韦建军 余新刚 芶富均 Yichao PENG;Zongbiao YE;Sishu WANG;Guo PU;Xianyang LIU;Congcong YUAN;Jiashu LIAO;Jianjun WEI;Xingang YU;Fujun GOU(Key Laboratory of Radiation Physics and Technology,Ministry of Education,Institute of Nuclear Science and Technology,Sichuan University,Chengdu 610064,People’s Republic of China;Institute of Atomic and Molecular Physics,Sichuan University,Chengdu 610064,People’s Republic of China;Institute of High Performance Scientific Computation,Xihua University,Chengdu 610039,People’s Republic of China;School of Engineering Science,University of Chinese Academy of Sciences,Beijing 100049,People’s Republic of China)

机构地区：[1]Key Laboratory of Radiation Physics and Technology,Ministry of Education,Institute of Nuclear Science and Technology,Sichuan University,Chengdu 610064,People’s Republic of China [2]Institute of Atomic and Molecular Physics,Sichuan University,Chengdu 610064,People’s Republic of China [3]Institute of High Performance Scientific Computation,Xihua University,Chengdu 610039,People’s Republic of China [4]School of Engineering Science,University of Chinese Academy of Sciences,Beijing 100049,People’s Republic of China

出　　处：《Plasma Science and Technology》2024年第8期73-83,共11页等离子体科学和技术（英文版）

基　　金：funded by the Institutional Research Fund from Sichuan University(No.2020SCUNL211)。

摘　　要：To prolong the service life of optics,the feasibility of in situ cleaning of the multilayer mirror(MLM)of tin and its oxidized contamination was investigated using hydrogen plasma at different power levels.Granular tin-based contamination consisting of micro-and macroparticles was deposited on silicon via physical vapor deposition(PVD).The electrodedriven hydrogen plasma at different power levels was systematically diagnosed using a Langmuir probe and a retarding field ion energy analyzer(RFEA).Moreover,the magnitude of the self-biasing voltage was measured at different power levels,and the peak ion energy was corrected for the difference between the RFEA measurements and the self-biasing voltage(E_(RFEA)-eV_(self)).XPS analysis of O 1s and Sn 3d peaks demonstrated the chemical reduction process after 1 W cleaning.Analysis of surface and cross-section morphology revealed that holes emerged on the upper part of the macroparticles while its bottom remained smooth.Hills and folds appeared on the upper part of the microparticles,confirming the top-down cleaning mode with hydrogen plasma.This study provides an in situ electrode-driven hydrogen plasma etching process for tin-based contamination and will provide meaningful guidance for understanding the chemical mechanism of reduction and etching.

关 键 词：tin-based contamination hydrogen plasma in situ cleaning ion energy 

分 类 号：O539[理学—等离子体物理]